ZHCSD18A March   2013  – October 2014 LP55231

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Handling Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Charge Pump Electrical Characteristics
    7. 6.7  LED Driver Electrical Characteristics
    8. 6.8  LED Test Electrical Characteristics
    9. 6.9  Logic Interface Characteristics
    10. 6.10 Recommended External Clock Source Conditions
    11. 6.11 Serial Bus Timing Parameters (SDA, SCL)
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Programming
      2. 7.3.2 LED Error Detection
      3. 7.3.3 Energy Efficiency
      4. 7.3.4 Temperature Compensation
      5. 7.3.5 Charge Pump Operational Description
        1. 7.3.5.1 Overview
        2. 7.3.5.2 Output Resistance
        3. 7.3.5.3 Controlling The Charge Pump
        4. 7.3.5.4 LED Forward Voltage Monitoring
        5. 7.3.5.5 Gain Change Hysteresis
      6. 7.3.6 LED Driver Operational Description
        1. 7.3.6.1 Overview
        2. 7.3.6.2 Powering LEDs
        3. 7.3.6.3 Controlling The High-Side LED Drivers
      7. 7.3.7 Automatic Power-Save Mode
      8. 7.3.8 PWM Power-Save Mode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Modes Of Operation
    5. 7.5 Programming
      1. 7.5.1 I2C-Compatible Control Interface
        1. 7.5.1.1 Data Validity
        2. 7.5.1.2 Start And Stop Conditions
        3. 7.5.1.3 Transferring Data
      2. 7.5.2 I2C-Compatible Chip Address
        1. 7.5.2.1 Control Register Write Cycle
        2. 7.5.2.2 Control Register Read Cycle
        3. 7.5.2.3 Auto-Increment Feature
    6. 7.6 Register Maps
      1. 7.6.1 Register Set
      2. 7.6.2 Control Register Details
      3. 7.6.3 Instruction Set
      4. 7.6.4 LED Driver Instructions
        1. 7.6.4.1 Ramp
        2. 7.6.4.2 Ramp Instruction Application Example
        3. 7.6.4.3 Set_PWM
        4. 7.6.4.4 Wait
      5. 7.6.5 LED Mapping Instructions
        1. 7.6.5.1  MUX_LD_START; MUX_LD_END
        2. 7.6.5.2  MUX_MAP_START
        3. 7.6.5.3  MUX_SEL
        4. 7.6.5.4  MUX_CLR
        5. 7.6.5.5  MUX_MAP_NEXT
        6. 7.6.5.6  MUX_LD_NEXT
        7. 7.6.5.7  MUX_MAP_PREV
        8. 7.6.5.8  MUX_LD_PREV
        9. 7.6.5.9  MUX_MAP_ADDR
        10. 7.6.5.10 MUX_LD_ADDR
      6. 7.6.6 Branch Instructions
        1. 7.6.6.1 BRANCH
        2. 7.6.6.2 INT
        3. 7.6.6.3 RST
        4. 7.6.6.4 END
        5. 7.6.6.5 TRIGGER
      7. 7.6.7 Arithmetic Instructions
        1. 7.6.7.1 LD
        2. 7.6.7.2 ADD
        3. 7.6.7.3 SUB
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Using Two LP55231 in the Same Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Driving Haptic Feedback with LP55231
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Voltage Voltage on power pin VDD −0.3 6 V
Voltage on D1 to D9, C1−, C1+,
C2−, C2+, VOUT		 −0.3 V to VDD +0.3V with 6 V max V
Power Continuous power dissipation(3) Internally limited
Temperature Junction temperature (TJ-MAX) 125 °C
Maximum lead temperature (soldering) See (4)
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage are with respect to the potential at the GND pin.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typ.) and disengages at TJ = 130°C (typ.).
(4) For detailed soldering specifications and information, please refer to Texas Instruments Application Note AN-1187: Leadless Leadframe Package (LLP)(SNOA401).

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –2500 2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –1000 1000
Machine model: all pins –250 250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions(1)(2)

Over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Input voltage 2.7 5.5 V
Voltage on logic pins (input or output pins) 0 VDD
IOUT Recommended charge pump load current 0 100 mA
TJ Junction temperature −30 125 °C
TA Ambient temperature(3) −30 85
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage are with respect to the potential at the GND pin.
(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.4 Thermal Information

THERMAL METRIC(1) LP55231 UNIT
WQFN (RTW)
24 PINS
RθJA Junction-to-ambient thermal resistance(2) 36.6 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design.

6.5 Electrical Characteristics(1)(2)(3)

Typical (TYP) values apply for TA = 25°C and minimum (MIN) and maximum (MAX) apply over the operating ambient temperature range (−30°C < TA < 85°C). Specifications apply to the LP55231 Functional Block Diagram with: VDD = 3.6 V, VEN = 1.65 V, COUT = 1 µF, CIN = 1 µF, C1–2 = 0.47 µF, unless otherwise specified.(4)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IVDD Standby supply current VEN = 0V, CHIP_EN=0 (bit), external 32-kHz clock running or not running 0.2 1 µA
CHIP_EN=0 (bit), external 32-kHz clock not running 1 1.7 µA
CHIP_EN=0 (bit), external 32-kHz clock running 1.4 2.3 µA
Normal mode supply current External 32-kHz clock running, charge pump and current source outputs disabled 0.6 0.75 mA
Charge pump in 1x mode, no load, current source outputs disabled 0.8 0.95 mA
Charge pump in 1.5x mode, no load, current source outputs disabled 1.8 mA
Power save mode supply current External 32-kHz clock running 10 15 µA
Internal oscillator running 0.6 0.75 mA
ƒOSC Internal oscillator frequency accuracy TA = 25°C −4% 4%
–7% 7%
(1) The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Test Conditions and/or Notes. Typical specifications are estimations only and are not verified.
(2) All voltages are with respect to the potential at the GND pin.
(3) Min and Max limits are verified by design, test, or statistical analysis.
(4) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.

6.6 Charge Pump Electrical Characteristics

Typical (TYP) values apply for TA = 25°C and minimum (MIN) and maximum (MAX) apply over the operating ambient temperature range (−30°C < TA < 85°C). Specifications apply to the LP55231 Functional Block Diagram with: VDD = 3.6 V, VEN = 1.65 V, COUT = 1 µF, CIN = 1 µF, C1–2 = 0.47 µF, unless otherwise specified.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ROUT Charge pump output resistance Gain = 1.5x
Gain = 1x		 3.5
1		 Ω
ƒSW Switching frequency 1.25 MHz
IGND Ground current Gain = 1.5x
Gain = 1x		 1.2
0.3		 mA
tON VOUT turnon time(2) VDD = 3.6V, IOUT = 60 mA 100 µs
(1) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
(2) Turnon time is measured from the moment the charge pump is activated until the VOUT crosses 90% of its target value.

6.7 LED Driver Electrical Characteristics

Typical (TYP) values apply for TA = 25°C and minimum (MIN) and maximum (MAX) apply over the operating ambient temperature range (−30°C < TA < 85°C). Specifications apply to the LP55231 Functional Block Diagram with: VDD = 3.6 V, VEN = 1.65 V, COUT = 1 µF, CIN = 1 µF, C1–2 = 0.47 µF, unless otherwise specified.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ILEAKAGE Leakage current (outputs D1 to D9) PWM = 0% 0.1 1 µA
IMAX Maximum source current Outputs D1 to D9 25.5 mA
IOUT Output current accuracy (2) Output current set to 17.5 mA −4% 4%
Output current set to 17.5 mA
TA = 25°C		 –5% 5%
IMATCH Matching (2) Output current set to 17.5 mA
TA = 25°C		 1% 2.5%
ƒLED LED switching frequency 312 Hz
VSAT Saturation voltage (3) Output current set to 17.5 mA
TA = 25°C		 45 100 mV
(1) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
(2) Output Current Accuracy is the difference between the actual value of the output current and programmed value of this current. Matching is the maximum difference from the average. For the constant current outputs on the part (D1 to D9), the following are determined: the maximum output current (MAX), the minimum output current (MIN), and the average output current of all outputs (AVG). Two matching numbers are calculated: (MAX-AVG)/AVG and (AVG-MIN)/AVG. The largest number of the two (worst case) is considered the matching figure. Note that some manufacturers have different definitions in use.
(3) Saturation voltage is defined as the voltage when the LED current has dropped 10% from the value measured at VOUT – 1V.

6.8 LED Test Electrical Characteristics

Typical (TYP) values apply for TA = 25°C and minimum (MIN) and maximum (MAX) apply over the operating ambient temperature range (−30°C < TA < 85°C). Specifications apply to the LP55231 Functional Block Diagram with: VDD = 3.6 V, VEN = 1.65 V, COUT = 1 µF, CIN = 1 µF, C1–2 = 0.47 µF, unless otherwise specified.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LSB Least significant bit 30 mV
EABS Total unadjusted error(2) VIN_TEST = 0V to VDD
TA = 25°C		 < ±3 ±4 LSB
tCONV Conversion time 2.7 ms
VIN_TEST DC voltage range TA = 25°C 0 5 V
(1) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
(2) Total unadjusted error includes offset, full-scale, and linearity errors.

6.9 Logic Interface Characteristics

Typical (TYP) values apply for TA = 25°C and minimum (MIN) and maximum (MAX) apply over the operating ambient temperature range (−30°C < TA < 85°C). Specifications apply to the LP55231 Functional Block Diagram with: VDD = 3.6 V, VEN = 1.65 V, COUT = 1 µF, CIN = 1 µF, C1–2 = 0.47 µF, unless otherwise specified.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LOGIC INPUT EN
VIL Input low level 0.5 V
VIH Input high level 1.2 V
II Input current –1 1 µA
tDELAY Input delay(2) 2 µs
LOGIC INPUT SCL, SDA, TRIG, CLK, ASEL0, ASEL1
VIL Input low level 0.2xVEN V
VIH Input high level 0.8xVEN V
II Input current –1 1 µA
LOGIC OUTPUT SDA, TRIG, INT
VOL Output low level IOUT = 3 mA (pullup current) 0.3 0.5 V
IL Output leakage current VOUT = 2.8 V 1 µA
(1) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
(2) The I2C host should allow at least 500 μs before sending data to the LP55231 after the rising edge of the enable line.

6.10 Recommended External Clock Source Conditions(1)(2)

MIN NOM MAX UNIT
LOGIC INPUT CLK
ƒCLK Clock frequency 32.7 kHz
tCLKH High time 6 µs
tCLKL Low time 6 µs
tr Clock rise time 10% to 90% 2 µs
tf Clock fall time 90% to 10% 2 µs
(1) Specification is verified by design and is not tested in production. VEN = 1.65 V to VDD.
(2) The ideal external clock signal for the LP55231 is a 0-V to VEN 25% to 75% duty-cycle square wave. At frequencies above 32.7 kHz, program execution will be faster, and at frequencies below 32.7 kHz program execution will be slower.

6.11 Serial Bus Timing Parameters (SDA, SCL)(1)

MIN MAX UNIT
ƒSCL Clock frequency 400 kHz
1 Hold time (repeated) START condition 0.6 µs
2 Clock low time 1.3 µs
3 Clock high time 600 ns
4 Setup time for a repeated START condition 600 ns
5 Data hold time 50 ns
6 Data setup time 100 ns
7 Rise time of SDA and SCL 20+0.1 Cb 300 ns
8 Fall time of SDA and SCL 15+0.1 Cb 300 ns
9 Setup time for STOP condition 600 ns
10 Bus free time between a STOP and a START condition 1.3 µs
Cb Capacitive load parameter for each bus line
Load of One picofarad corresponds to one nanosecond.		 10 200 ns
(1) Specification is verified by design and is not tested in production. VEN = 1.65 V to VDD.
301986300.pngFigure 1. External Clock Signal
30198600.pngFigure 2. Timing Parameters

6.12 Typical Characteristics

Unless otherwise specified: VDD = 3.6 V, CIN = COUT = 1 µF, C1 = C2 = 0.47 µF, TA = 25°C. CIN, COUT, C1, C2: Low-ESR surface-mount ceramic capacitors (MLCCs) used in setting electrical characteristics.
301986301.png
Figure 3. Charge Pump 1.5x Efficiency vs Load Current
301986305.png
6 x 1-mA Load (6 Nichia NSCW100 WLEDs On D1 To D6)
Figure 5. Gain Change Hysteresis Loop at Factory Settings
301986306.png
17.5 mA Current
Figure 7. LED Current Matching Distribution
30198677.gif
Charge Pump In 1x Mode
If the charge pump is OFF the supply current is even lower.
Figure 9. Power Save Mode Supply Current vs VDD
30198649.gif
Figure 11. 100% PWM RGB LED Efficiency vs. VDD
301986303.png
Figure 4. Output Voltage of the Charge Pump (1.5x) as a Function of Load Current at Four Input Voltage Levels
301986302.png
Load: 6 x Nichia NSCW100 WLEDs On D1 To D6 @ 100% PWM
Figure 6. Effect of Adaptive Hysteresis on the Width of the Hysteresis Loop
301986304.png
17.5 mA Current
Figure 8. LED Current Accuracy Distribution
30198679.gif
51h To Addr 36h ILOAD = 60 mA VDD= 3.6 V
Figure 10. Serial Bus Write and Charge Pump Start-up Waveform
30198650.gif
Figure 12. 100% PWM WLED Efficiency vs. VDD
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