ZHCSOW8 July   2022 LP5912-EP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Output and Input Capacitors
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Output Automatic Discharge (RAD)
      3. 7.3.3 Reverse Current Protection (IRO)
      4. 7.3.4 Internal Current Limit (ISC)
      5. 7.3.5 Thermal Overload Protection (TSD)
      6. 7.3.6 Power-Good Output (PG)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable (EN)
      2. 7.4.2 Minimum Operating Input Voltage (VIN)
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External Capacitors
        2. 8.2.2.2 Input Capacitor
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Capacitor Characteristics
        5. 8.2.2.5 Remote Capacitor Operation
        6. 8.2.2.6 Power Dissipation
        7. 8.2.2.7 Estimating Junction Temperature
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
  10. 10Electrostatic Discharge Caution
  11. 11术语表
  12. 12Mechanical, Packaging, and Orderable Information

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6.5 Electrical Characteristics

VIN = VOUT(NOM) + 0.5 V or 1.6 V, whichever is greater; VEN = 1.35 V, CIN = 1 μF, COUT = 1 μF, IOUT = 1 mA (unless otherwise stated).(1)(2)(3)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT VOLTAGE AND REGULATION
ΔVOUT Output voltage tolerance For VOUT(NOM) ≥ 3.3 V,
VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V,
IOUT = 1 mA to 500 mA		 -2 2 %
For 1.1 V ≤ VOUT(NOM) < 3.3 V,
VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V,
IOUT = 1 mA to 500 mA		 -3 3
For VOUT(NOM) < 1.1 V,
1.6 V ≤ VIN ≤ 6.5 V,
IOUT = 1 mA to 500 mA
Line regulation For VOUT(NOM) ≥ 1.1V,
VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V		 0.8 %/V
For VOUT(NOM) < 1.1 V,
1.6 V ≤ VIN ≤ 6.5 V
Load regulation For IOUT = 1mA to 500 mA 0.0022 %/mA
CURRENT LEVELS
ISC Short-circuit current limit TJ = 25°C, (4) 700 900 1100 mA
IRO Reverse leakage current (5) VIN < VOUT 10 150 µA
IQ Quiescent current (6) VEN = 1.35 V, IOUT = 0 mA 30 55 µA
VEN = 1.35 V, IOUT = 500 mA 400 600
IQ(SD) Quiescent current shutdown mode (6) VEN = 0 V,
–55°C ≤ TJ ≤ 85°C		 0.2 1.5 µA
VEN = 0 V 0.2 5
IG Ground-current (7) VEN = 1.35 V, IOUT = 0 mA 35 µA
VDO DROPOUT VOLTAGE
VDO Dropout voltage (8) IOUT = 500 mA, 1.6 V ≤ VOUT(NOM) < 3.3 V 170 250 mV
IOUT = 500 mA, 3.3 V ≤ VOUT(NOM) ≤ 5.5 V 95 180 mV
VIN to VOUT RIPPLE REJECTION
PSRR Power-supply rejection ratio (9) f = 100 Hz, VOUT ≥ 1.1 V, IOUT = 20 mA 80 dB
f = 1 kHz, VOUT ≥ 1.1 V, IOUT = 20 mA 75
f = 10 kHz, VOUT ≥ 1.1 V, IOUT = 20 mA 65
f = 100 kHz, VOUT ≥ 1.1 V, IOUT = 20 mA 40
f = 100 Hz, 0.8V ≤ VOUT < 1.1 V, IOUT = 20 mA 65
f = 1 kHz, 0.8V ≤ VOUT < 1.1 V, IOUT = 20 mA 65
f = 10 kHz, 0.8V ≤ VOUT < 1.1 V, IOUT = 20 mA 65
f = 100 kHz, 0.8V ≤ VOUT < 1.1 V, IOUT = 20 mA 40
OUTPUT NOISE VOLTAGE
eN Noise voltage IOUT = 1 mA, BW = 10 Hz to 100 kHz 12 μVRMS
IOUT = 500 mA, BW = 10 Hz to 100 kHz 12
THERMAL SHUTDOWN
TSD Thermal shutdown temperature 160 °C
THYS Thermal shutdown hysteresis 15 °C
LOGIC INPUT THRESHOLDS
VEN(OFF) Off threshold 0.25 V
VEN(ON) On threshold 1.35 V
IEN Input current at EN terminal (10) VIN = 6 V, VEN = 6 V 3 µA
VIN = 3.3 V, VEN = 0 V 0.001 µA
PGHYS PG threshold hysteresis (% of nominal VOUT) 4 %
PGLTH PG low threshold (% of nominal VOUT) 86 90 93 %
VOL(PG) PG pin low-level output voltage VOUT < PGLTH, sink current = 1 mA 400 mV
ILKG(PG) PG pin leakage current VOUT < PGHTH, VPG = 6 V 1 µA
TRANSITION CHARACTERISTICS
ΔVOUT Line transients (9) For VIN ↑ and VOUT(NOM) ≥ 1.1 V,
VIN = (VOUT(NOM) + 0.5 V) to (VOUT(NOM) + 1.1 V),
VIN trise = 30 µs		 1 mV
For VIN ↑ and VOUT(NOM) < 1.1 V,
VIN = 1.6 V to 2.2 V,
VIN trise = 30 µs
For VIN ↓ and VOUT(NOM) ≥ 1.1 V,
VIN = (VOUT(NOM) + 0.5 V) to (VOUT(NOM) + 1.1 V),
VIN trise = 30 µs		 -1
For VIN ↓ and VOUT(NOM) < 1.1 V,
VIN = 1.6 V to 2.2 V,
VIN trise = 30 µs
Load transients (9) IOUT = 5 mA to 500 mA,
IOUT tRISE = 10 μs		 -45 mV
IOUT = 500 mA to 5 mA,
IOUT tFALL = 10 μs		 45
Overshoot on start-up (9) 5 %
tON Turnon time From VEN > VEN(ON) to VOUT = 95% of VOUT(NOM) 200 µs
OUTPUT AUTO DISCHARGE RATE
RAD Output discharge pulldown resistance VEN = 0 V, VIN = 3.6 V 100 Ω
(1) All voltages are with respect to the device GND pin, unless otherwise stated.
(2) Minimum and maximum limits are specified through test, design, or statistical correlation over the junction temperature (TJ ) range of –55°C to +125°C, unless otherwise stated. Typical values represent the most likely parametric norm at TA = 25°C, and are provided for reference purposes only.
(3) In applications where high power dissipation and poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to-ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).
(4) Short-circuit current (ISC) is equivalent to current limit. To minimize thermal effects during testing, ISC is measured with VOUT pulled to 100 mV below its nominal voltage.
(5) Reverse current (IRO) is measured at the IN pin.
(6) Quiescent current is defined here as the difference in current between the input voltage source and the load at VOUT.
(7) Ground current is defined here as the total current flowing to ground as a result of all input voltages applied to the device (IQ + IEN).
(8) Dropout voltage (VDO) is the voltage difference between the input and the output at which the output voltage drops to 150 mV below its nominal value when VIN = VOUT + 0.5 V. Dropout voltage is not a valid condition for output voltages less than 1.6 V as compliance with the minimum operating voltage requirement cannot be assured.
(9) This specification is specified by design.
(10) There is a 3-MΩ pulldown resistor between the EN pin and GND pin on the device.
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