ZHCSCK8G May 2014 – October 2017 LP8860-Q1
PRODUCTION DATA.
A pFET transistor with necessary voltage rating (VDS at least 5 V higher than max input voltage) must be used. Current rating for the FET must be the same as input peak current or greater. Transfer characteristic is very important for pFET. VGS for open transistor must be less then VIN. A 20-kΩ resistor between the pFET gate and source is sufficient.
If a pFET with high enough VDS and low VGS is not available, it is possible to use an nFET with extra external components with the EEPROM bit NMOS_PLFET_EN set high. See Charge Pump section (Figure 25) for using the nFET as a power-line FET.