ZHCSCK8G May 2014 – October 2017 LP8860-Q1
PRODUCTION DATA.
Schematic on Figure 55 shows the critical part of circuitry: boost components, the LP8860-Q1 internal charge pump for gate driver powering and powering/grounding of LP8860-Q1 boost components. Layout example for this is shown in Figure 67.
REFERENCE DESIGNATOR | DESCRIPTION | NOTE |
---|---|---|
R1 | 20 mΩ 3 W | Input current sensing resistor |
R2 | 20 kΩ 0.1 W | Power-line FET gate pullup resistor |
R3 | 10 Ω 0.1 W | Gate resistor for boost FET |
R4 | 10 Ω 0.1 W | Current sensing filter resistor |
R5 | 25 mΩ 3 W | Boost current sensing resistor |
C1 | 1 μF 10 V ceramic capacitor | VDD bypass capacitor |
C2 | 10 μF 16 V ceramic capacitor | Charge pump output capacitor |
C3 | 33 μF 50 V electrolytic capacitor | Boost input capacitor |
C4 | 10 μF 50 V ceramic capacitor | Boost input capacitor |
C5 | 1 μF 10 V ceramic capacitor | Flying capacitor |
C6 | 1000 pF 10 V ceramic capacitor | Current sensing filter capacitor |
C7 | 39 pF 50 V ceramic capacitor | High frequency bypass capacitor |
C8 | 33 μF 50 V electrolytic capacitor | Boost output capacitor |
C9 | 10 μF 100 V ceramic capacitor | Boost output capacitor |
L1 | 22 μH saturation current 9 A | Boost inductor |
D1 | 60 V 15 A Schottky diode | Boost Schottky diode |
Q1 | 60 V 10 A pMOSFET | Power-line FET |
Q2 | 60 V 15 A nMOSFET | Boost nMOSFET |