ZHCSGN5B March 2017 – July 2018 LP8863-Q1
PRODUCTION DATA.
A power line FET can be used to disconnect input power from boost input to protect the LP8863-Q1 device and boost components in case an overcurrent event occurs. A P type MOSFET is used for the power-line FET. Voltage rating must be at least 25% higher than maximum input voltage level. Low RDSON is important to reduce power loss on the FET — less than 20 mΩ is recommended. Current rating for the FET must be at least 25% higher than input peak current. Gate-to-source voltage (VGS) for open transistor must be less than minimum input voltage; use a 20-kΩ resistor between the pFET gate and source.