ZHCSKL3C December   2019  – May 2024 LP8866-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Logic Interface Characteristics
    7. 5.7 Timing Requirements for I2C Interface
    8.     14
    9. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Control Interface
      2. 6.3.2 Function Setting
      3. 6.3.3 Device Supply (VDD)
      4. 6.3.4 Enable (EN)
      5. 6.3.5 Charge Pump
      6. 6.3.6 Boost Controller
        1. 6.3.6.1 Boost Cycle-by-Cycle Current Limit
        2. 6.3.6.2 Controller Min On/Off Time
        3. 6.3.6.3 Boost Adaptive Voltage Control
          1. 6.3.6.3.1 FB Divider Using Two-Resistor Method
          2. 6.3.6.3.2 FB Divider Using Three-Resistor Method
          3. 6.3.6.3.3 FB Divider Using External Compensation
        4. 6.3.6.4 Boost Sync and Spread Spectrum
        5. 6.3.6.5 Boost Output Discharge
        6. 6.3.6.6 Light Load Mode
      7. 6.3.7 LED Current Sinks
        1. 6.3.7.1 LED Output Current Setting
        2. 6.3.7.2 LED Output String Configuration
        3. 6.3.7.3 LED Output PWM Clock Generation
      8. 6.3.8 Brightness Control
        1. 6.3.8.1 Brightness Control Signal Path
        2. 6.3.8.2 Dimming Mode
        3. 6.3.8.3 LED Dimming Frequency
        4. 6.3.8.4 Phase-Shift PWM Mode
        5. 6.3.8.5 Hybrid Mode
        6. 6.3.8.6 Direct PWM Mode
        7. 6.3.8.7 Sloper
        8. 6.3.8.8 PWM Detector Hysteresis
        9. 6.3.8.9 Dither
      9. 6.3.9 Protection and Fault Detections
        1. 6.3.9.1 Supply Faults
          1. 6.3.9.1.1 VIN Undervoltage Faults (VINUVLO)
          2. 6.3.9.1.2 VIN Overvoltage Faults (VINOVP)
          3. 6.3.9.1.3 VDD Undervoltage Faults (VDDUVLO)
          4. 6.3.9.1.4 VIN OCP Faults (VINOCP)
            1. 6.3.9.1.4.1 VIN OCP Current Limit vs. Boost Cycle-by-Cycle Current Limit
          5. 6.3.9.1.5 Charge Pump Faults (CPCAP, CP)
          6. 6.3.9.1.6 CRC Error Faults (CRCERR)
        2. 6.3.9.2 Boost Faults
          1. 6.3.9.2.1 Boost Overvoltage Faults (BSTOVPL, BSTOVPH)
          2. 6.3.9.2.2 Boost Overcurrent Faults (BSTOCP)
          3. 6.3.9.2.3 LEDSET Resistor Missing Faults (LEDSET)
          4. 6.3.9.2.4 MODE Resistor Missing Faults (MODESEL)
          5. 6.3.9.2.5 FSET Resistor Missing Faults (FSET)
          6. 6.3.9.2.6 ISET Resistor Out of Range Faults (ISET)
          7. 6.3.9.2.7 Thermal Shutdown Faults (TSD)
        3. 6.3.9.3 LED Faults
          1. 6.3.9.3.1 Open LED Faults (OPEN_LED)
          2. 6.3.9.3.2 Short LED Faults (SHORT_LED)
          3. 6.3.9.3.3 LED Short to GND Faults (GND_LED)
          4. 6.3.9.3.4 Invalid LED String Faults (INVSTRING)
          5. 6.3.9.3.5 I2C Timeout Faults
        4. 6.3.9.4 Overview of the Fault and Protection Schemes
    4. 6.4 Device Functional Modes
      1. 6.4.1  State Diagram
      2. 6.4.2  Shutdown
      3. 6.4.3  Device Initialization
      4. 6.4.4  Standby Mode
      5. 6.4.5  Power-line FET Soft Start
      6. 6.4.6  Boost Start-Up
      7. 6.4.7  Normal Mode
      8. 6.4.8  Fault Recovery
      9. 6.4.9  Latch Fault
      10. 6.4.10 Start-Up Sequence
    5. 6.5 Programming
      1. 6.5.1 I2C-Compatible Interface
      2. 6.5.2 Programming Examples
        1. 6.5.2.1 General Configuration Registers
        2. 6.5.2.2 Clearing Fault Interrupts
        3. 6.5.2.3 Disabling Fault Interrupts
        4. 6.5.2.4 Diagnostic Registers
  8. 7 Register Maps
    1. 7.1 FullMap Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Full Feature Application for Display Backlight
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Inductor Selection
          2. 8.2.1.2.2  Output Capacitor Selection
          3. 8.2.1.2.3  Input Capacitor Selection
          4. 8.2.1.2.4  Charge Pump Output Capacitor
          5. 8.2.1.2.5  Charge Pump Flying Capacitor
          6. 8.2.1.2.6  Output Diode
          7. 8.2.1.2.7  Switching FET
          8. 8.2.1.2.8  Boost Sense Resistor
          9. 8.2.1.2.9  Power-Line FET
          10. 8.2.1.2.10 Input Current Sense Resistor
          11. 8.2.1.2.11 Feedback Resistor Divider
          12. 8.2.1.2.12 Critical Components for Design
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Application with Basic/Minimal Operation
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
      3. 8.2.3 SEPIC Mode Application
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
          1. 8.2.3.2.1  Inductor Selection
          2. 8.2.3.2.2  Coupling Capacitor Selection
          3. 8.2.3.2.3  Output Capacitor Selection
          4. 8.2.3.2.4  Input Capacitor Selection
          5. 8.2.3.2.5  Charge Pump Output Capacitor
          6. 8.2.3.2.6  Charge Pump Flying Capacitor
          7. 8.2.3.2.7  Switching FET
          8. 8.2.3.2.8  Output Diode
          9. 8.2.3.2.9  Switching Sense Resistor
          10. 8.2.3.2.10 Power-Line FET
          11. 8.2.3.2.11 Input Current Sense Resistor
          12. 8.2.3.2.12 Feedback Resistor Divider
          13. 8.2.3.2.13 Critical Components for Design
        3. 8.2.3.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
8.2.1.2.9 Power-Line FET

A power line FET can be used to disconnect input power from boost input to protect the LP8866-Q1 device and boost components in case an overcurrent event occurs. A P type MOSFET is used for the power-line FET. Voltage rating must be at least 25% higher than maximum input voltage level. Low RDSON is important to reduce power loss on the FET — less than 20mΩ is recommended. Current rating for the FET must be at least 25% higher than input peak current. Minimum Gate-to-Source voltage (VGS) to turn on transistor fully must be less than minimum input voltage; use a 20kΩ resistor between the pFET gate and source.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |