ZHCSD68H July   2014  – April 2021 LSF0204 , LSF0204D

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Switching Characteristics: AC Performance (Translating Down, 3.3 V to 1.8 V)
    7. 7.7  Switching Characteristics: AC Performance (Translating Down, 3.3 V to 1.2 V)
    8. 7.8  Switching Characteristics: AC Performance (Translating Up, 1.8 V to 3.3 V)
    9. 7.9  Switching Characteristics: AC Performance (Translating Up, 1.2 V to 1.8 V)
    10. 7.10 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Load Circuit AC Waveform for Outputs
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Support High Speed Translation, Greater than 100 MHz
      2. 9.3.2 Bidirectional Voltage Translation Without DIR Terminal
      3. 9.3.3 5-V Tolerance on IO Port and 125°C Support
      4. 9.3.4 Channel Specific Translation
      5. 9.3.5 Ioff, Partial Power Down Mode
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 I2C PMBus, SMBus, GPIO, Application
        1. 10.2.1.1 Design Requirements
          1. 10.2.1.1.1 Enable, Disable, and Reference Voltage Guidelines
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Bidirectional Translation
            1. 10.2.1.2.1.1 Pull-Up Resistor Sizing
          2. 10.2.1.2.2 LS Family Bandwidth
        3. 10.2.1.3 Application Curve
      2. 10.2.2 MDIO Application
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
      3. 10.2.3 Multiple Voltage Translation in Single Device, Application
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 接收文档更新通知
    2. 13.2 支持资源
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGY|14
  • YZP|12
  • RUT|12
  • PW|14
散热焊盘机械数据 (封装 | 引脚)
订购信息

13.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
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