ZHCSSV1 august 2023 MCF8316C-Q1
PRODUCTION DATA
An adjustable gate-drive current control is provided for the output stage MOSFETs to achieve configurable slew rate for EMI mitigation. The MOSFET VDS slew rate is a critical factor for optimizing conducted and radiated emissions, total energy and duration of diode recovery spikes and switching voltage transients related to parasitic elements of the PCB. This slew rate is predominantly determined by the control of the internal MOSFET gate current as shown in Figure 7-9.
The slew rate of each half-bridge can be adjusted through SLEW_RATE. Slew rate can be configured as either 125-V/µs or 200-V/µs. The slew rate is calculated by the rise-time and fall-time of the voltage on OUTx pin as shown in Figure 7-10.