2 修订历史记录
Changes from February 25, 2015 to October 3, 2018
- Added Section 3.1, Related ProductsGo
- Added Section 4.5, Buffer TypeGo
- Added typical conditions statements at the beginning of Section 5, SpecificationsGo
- Added SD24_B input pins and AUXVCCx pins to exception list on "Voltage applied to pins" parameter, and added SD24_B input pin limits in "Diode current at pins" parameter in Section 5.1, Absolute Maximum RatingsGo
- Added Section 5.7, Thermal Resistance CharacteristicsGo
- Corrected the type of nonvolatile memory (changed "FRAM" to "flash") in Section 5.8.1, Power Supply SequencingGo
- Updated notes (1) and (2) and added note (3) in Table 5-1, Wake-up Times From Low-Power Modes and ResetGo
- Changed the MIN value of the V(DVCC_BOR_hys) parameter from 60 mV to 50 mV in Table 5-12, PMM, Brownout Reset (BOR)Go
- Replaced fFrame parameter with fLCD, fFRAME,4mux, and fFRAME,8mux parameters in Table 5-33, LCD_C Operating ConditionsGo
- Removed ADC10DIV from the formula for the TYP value in the second row for tCONVERT in Table 5-44, 10-Bit ADC, Timing Parameters, because fADC10CLK is after divisionGo
- Updated Test Conditions for all parameters in Table 5-45, 10-Bit ADC, Linearity Parameters: changed from "(VeREF+ – VeREF–)min ≤ (VeREF+ – VeREF–)" to "1.4 V ≤ (VeREF+ – VeREF–)" in all casesGo
- Added "CVeREF+ = 20 pF" to EI Test ConditionsGo
- Changed all instances of "bootloader" to "bootloader" throughout documentGo
- Corrected spelling of NMIIFG in Table 6-9, System Module Interrupt Vector RegistersGo
- 将先前的开发工具支持部分替换为Section 8.3工具与软件Go
- 更改了格式并在Section 8.4文档支持 中添加了内容Go