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ZHCSDF6F October 2014 – December 2021 MSP430FR4131 , MSP430FR4132 , MSP430FR4133

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

PM|64
- MTQF008B
DGG|48
- MPDS583
DGG|56
- MPDS570

散热焊盘机械数据 (封装 | 引脚)

订购信息

8.12.2.1 Wake-up Times From Low-Power Modes and Reset

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER		TEST CONDITIONS	V_CC	MIN	TYP	MAX	UNIT
t_{WAKE-UP FRAM}	Additional wake-up time to activate the FRAM in AM if previously disabled by the FRAM controller or from a LPM if immediate activation is selected for wake-up⁽¹⁾		3 V		10		µs
t_{WAKE-UP LPM0}	Wake-up time from LPM0 to active mode ⁽¹⁾		3 V			200 ns + 2.5/f_DCO
t_{WAKE-UP LPM3}	Wake-up time from LPM3 to active mode ⁽²⁾		3 V		10		µs
t_{WAKE-UP LPM4}	Wake-up time from LPM4 to active mode		3 V		10		µs
t_{WAKE-UP LPM3.5}	Wake-up time from LPM3.5 to active mode ⁽²⁾		3 V		350		µs
t_{WAKE-UP LPM4.5}	Wake-up time from LPM4.5 to active mode ⁽²⁾	SVSHE = 1	3 V		350		µs
t_{WAKE-UP LPM4.5}	Wake-up time from LPM4.5 to active mode ⁽²⁾	SVSHE = 0	3 V		1		ms
t_{WAKE-UP-RESET}	Wake-up time from RST or BOR event to active mode ⁽²⁾		3 V		1		ms
t_RESET	Pulse duration required at RST/NMI pin to accept a reset		3 V	2			µs

(1) The wake-up time is measured from the edge of an external wake-up signal (for example, port interrupt or wake-up event) to the first externally observable MCLK clock edge.

(2) The wake-up time is measured from the edge of an external wake-up signal (for example, port interrupt or wake-up event) until the first instruction of the user program is executed.