ZHCSTL4B October 2023 – May 2024 MSPM0C1103 , MSPM0C1104
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
MSPM0Cxx MCUs include a low-power high-performance SRAM memory with zero wait state access across the supported CPU frequency range of the device. SRAM memory can be used for storing volatile information such as the call stack, heap, global data, and code. The SRAM memory content is fully retained in RUN, SLEEP, STOP, and STANDBY operating modes and is lost in SHUTDOWN mode. A write protection mechanism is provided to allow the application to dynamically write protect the SRAM memory with 1KB resolution. Write protection is useful when placing executable code into SRAM to provide a level of protection against unintentional overwrites of code by either the CPU or DMA. Placing code in SRAM can improve performance of critical loops by enabling zero wait state operation and lower power consumption.