ZHCSTL4B October   2023  – May 2024 MSPM0C1103 , MSPM0C1104

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. 功能方框图
  6. Device Comparison
  7. Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 POR and BOR
      2. 7.6.2 Power Supply Ramp
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 ADC
      1. 7.11.1 Electrical Characteristics
      2. 7.11.2 Switching Characteristics
      3. 7.11.3 Linearity Parameters
      4. 7.11.4 Typical Connection Diagram
    12. 7.12 Temperature Sensor
    13. 7.13 VREF
      1. 7.13.1 Voltage Characteristics
      2. 7.13.2 Electrical Characteristics
    14. 7.14 I2C
      1. 7.14.1 I2C Characteristics
      2. 7.14.2 I2C Filter
      3. 7.14.3 I2C Timing Diagram
    15. 7.15 SPI
      1. 7.15.1 SPI
      2. 7.15.2 SPI Timing Diagrams
    16. 7.16 UART
    17. 7.17 TIMx
    18. 7.18 Windowed Watchdog Characteristics
    19. 7.19 Emulation and Debug
      1. 7.19.1 SWD Timing
  9. Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0C110x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 CRC
    16. 8.16 UART
    17. 8.17 SPI
    18. 8.18 I2C
    19. 8.19 WWDT
    20. 8.20 Timers (TIMx)
    21. 8.21 Device Analog Connections
    22. 8.22 Input/Output Diagrams
    23. 8.23 Serial Wire Debug Interface
    24. 8.24 Device Factory Constants
    25. 8.25 Identification
  10. Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DYY|16
  • DDF|8
  • RUK|20
  • PW|20
  • DGS|20
  • DSG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

SRAM

MSPM0Cxx MCUs include a low-power high-performance SRAM memory with zero wait state access across the supported CPU frequency range of the device. SRAM memory can be used for storing volatile information such as the call stack, heap, global data, and code. The SRAM memory content is fully retained in RUN, SLEEP, STOP, and STANDBY operating modes and is lost in SHUTDOWN mode. A write protection mechanism is provided to allow the application to dynamically write protect the SRAM memory with 1KB resolution. Write protection is useful when placing executable code into SRAM to provide a level of protection against unintentional overwrites of code by either the CPU or DMA. Placing code in SRAM can improve performance of critical loops by enabling zero wait state operation and lower power consumption.