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ZHCSTL4B October 2023 – May 2024 MSPM0C1103 , MSPM0C1104

PRODUCTION DATA

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DYY|16
DDF|8
RUK|20
PW|20
DGS|20
DSG|8

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.8 Timing Characteristics

VDD=3.3V, T_a=25 ℃ (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TYP	UNIT
Wakeup Timing
t_{WAKE, SLEEP}	Wakeup time from SLEEP to RUN		2	cycles
t_{WAKE, STOP}	Wakeup time from STOP0 to RUN (SYSOSC enabled)		14	us
t_{WAKE, STOP}	Wakeup time from STOP2 to RUN (SYSOSC disabled)		15	us
t_{WAKE, STBY}	Wakeup time from STANDBY to RUN		20	us
t_{WAKE, SHDN}	Wakeup time from SHUTDOWN to RUN		112	us
Asynchronous Fast Clock Request Timing
t_DELAY	Delay time from edge of asynchronous request to first 24MHz MCLK edge	Mode is SLEEP2	1.2	us
		Mode is STOP2	1.2	us
		Mode is STANDBY1	5.0	us
Startup Timing
t_{START, RESET}	Device cold start-up time from reset/power-up ⁽¹⁾		210	us
NRST Timing
t_{RST, BOOTRST}	Pulse length on NRST pin to generate BOOTRST	ULPCLK≥4MHz	2	us
t_{RST, BOOTRST}	Pulse length on NRST pin to generate BOOTRST	ULPCLK=32kHz	100	us
t_{RST, POR}	Pulse length on NRST pin to generate POR		1	s

(1) The start-up time is measured from the time that VDD crosses VBOR0+ (cold start-up) to the time that the first instruction of the user program is executed.