ZHCSFU9A November   2016  – November 2017 MUX506 , MUX507

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化电路原理图
      2.      泄漏电流与温度间的关系
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions: MUX506
    2.     Pin Functions: MUX507
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Dual Supply
    6. 6.6 Electrical Characteristics: Single Supply
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1  Truth Tables
    2. 7.2  On-Resistance
    3. 7.3  Off Leakage
    4. 7.4  On-Leakage Current
    5. 7.5  Transition Time
    6. 7.6  Break-Before-Make Delay
    7. 7.7  Turn-On and Turn-Off Time
    8. 7.8  Charge Injection
    9. 7.9  Off Isolation
    10. 7.10 Channel-to-Channel Crosstalk
    11. 7.11 Bandwidth
    12. 7.12 THD + Noise
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultralow Leakage Current
      2. 8.3.2 Ultralow Charge Injection
      3. 8.3.3 Bidirectional Operation
      4. 8.3.4 Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 相关链接
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics: Dual Supply

at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
ANALOG SWITCH
Analog signal range TA = –40°C to +125°C VSS VDD V
RON On-resistance VS = 0 V, IS = –1 mA 125 170 Ω
VS = ±10 V, IS = –1 mA 145 200
TA = –40°C to +85°C 230
TA = –40°C to +125°C 250
ΔRON On-resistance mismatch between channels VS = ±10 V, IS = –1 mA 6 9 Ω
TA = –40°C to +85°C 14
TA = –40°C to +125°C 16
RFLAT On-resistance flatness VS = 10 V, 0 V, –10 V 20 45 Ω
TA = –40°C to +85°C 53
TA = –40°C to +125°C 58
On-resistance drift VS = 0 V 0.62 Ω/°C
IS(OFF) Input leakage current Switch state is off,
VS = ±10 V, VD = ±10 V(2)		 –1 –0.001 1 nA
TA = –40°C to +85°C –10 10
TA = –40°C to +125°C –25 25
ID(OFF) Output off-leakage current Switch state is off,
VS = ±10 V, VD = ±10 V(2)		 –1 –0.01 1 nA
TA = -40°C to +85°C –10 10
TA = -40°C to +125°C –25 25
ID(ON) Output on-leakage current Switch state is on,
VD = ±10 V, VS = floating		 –1 –0.01 1 nA
TA = –40°C to +85°C –10 10
TA = –40°C to +125°C –50 50
LOGIC INPUT
VIH Logic voltage high 2 V
VIL Logic voltage low 0.8 V
ID Input current 0.1 µA
SWITCH DYNAMICS(1)
tON Enable turn-on time VS = ±10 V, RL = 300 Ω,
CL= 35 pF		 82 136 ns
TA = –40°C to +85°C 145
TA = –40°C to +125°C 151
tOFF Enable turn-off time VS = ±10 V, RL = 300 Ω,
CL= 35 pF		 63 78 ns
TA = –40°C to +85°C 89
TA = –40°C to +125°C 97
tt Transition time VS = 10 V, RL = 300 Ω,
CL= 35 pF, 		97 143 ns
TA = –40°C to +85°C 151
TA = –40°C to +125°C 157
tBBM Break-before-make time delay VS = 10 V, RL = 300 Ω, CL= 35 pF, TA = –40°C to +125°C 30 54 ns
QJ Charge injection CL = 1 nF, RS = 0 Ω VS = 0 V TSSOP package 0.31 pC
SOIC package 0.67
VS = –15 V to +15 V TSSOP package ±0.9
SOIC package ±1.1
Off-isolation RL = 50 Ω, VS = 1 VRMS,
f = 1 MHz 		Nonadjacent channel to D, DA, DB TSSOP package –98 dB
SOIC package –94
Adjacent channel to D, DA, DB TSSOP package –94
SOIC package –88
Channel-to-channel crosstalk RL = 50 Ω, VS = 1 VRMS,
f = 1 MHz		 Nonadjacent channels TSSOP package –100 dB
SOIC package –96
Adjacent channels TSSOP package –88
SOIC package –83
CS(OFF) Input off-capacitance f = 1 MHz, VS = 0 V 2.1 3 pF
CD(OFF) Output off-capacitance f = 1 MHz, VS = 0 V MUX506 11.1 12.2 pF
MUX507 6.4 7.5
CS(ON), CD(ON) Output on-capacitance f = 1 MHz, VS = 0 V MUX506 13.5 15 pF
MUX507 8.7 10.2
POWER SUPPLY
VDD supply current All VA = 0 V or 3.3 V,
VS = 0 V, VEN = 3.3 V, 		45 59 µA
TA = –40°C to +85°C 62
TA = –40°C to +125°C 85
VSS supply current All VA = 0 V or 3.3 V,
VS = 0 V, VEN = 3.3 V, 		26 34 µA
TA = –40°C to +85°C 37
TA = –40°C to +125°C 58
(1) Specified by design; not subject to production testing.
(2) When VS is positive, VD is negative, and vice versa.
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