米6体育平台手机版

SLFS022I September 1973 – September 2014 NA555 , NE555 , SA555 , SE555

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
PW|8
- MPDS568
PS|8
- MSOP001A
P|8
- MPDI001B

散热焊盘机械数据 (封装 | 引脚)

PS|8
- QFND376

订购信息

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

			MAX	UNIT
V_CC	Supply voltage⁽²⁾		18	V
V_I	Input voltage	CONT, RESET, THRES, TRIG	V_CC	V
I_O	Output current		±225	mA
θ_JA	Package thermal impedance⁽³⁾⁽⁴⁾	D package	97	°C/W
		P package	85
		PS package	95
		PW package	149
θ_JC	Package thermal impedance⁽⁵⁾⁽⁶⁾	FK package	5.61	°C/W
θ_JC	Package thermal impedance⁽⁵⁾⁽⁶⁾	JG package	14.5	°C/W
T_J	Operating virtual junction temperature		150	°C
	Case temperature for 60 s	FK package	260	°C
	Lead temperature 1,6 mm (1/16 in) from case for 60 s	JG package	300	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to GND.

(3) Maximum power dissipation is a function of T_J(max), θ_JA, and T_A. The maximum allowable power dissipation at any allowable ambient temperature is P_D = (T_J(max) - T_A) / θ_JA. Operating at the absolute maximum T_J of 150°C can affect reliability.

(4) The package thermal impedance is calculated in accordance with JESD 51-7.

(5) Maximum power dissipation is a function of T_J(max), θ_JC, and T_C. The maximum allowable power dissipation at any allowable case temperature is P_D = (T_J(max) - T_C) / θ_JC. Operating at the absolute maximum T_J of 150°C can affect reliability.

(6) The package thermal impedance is calculated in accordance with MIL-STD-883.

7.2 Handling Ratings

PARAMETER	DEFINITION	MIN	MAX	UNIT
T_stg	Storage temperature range	–65	150	°C

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_CC	Supply voltage	NA555, NE555, SA555	4.5	16	V
V_CC	Supply voltage	SE555	4.5	18	V
V_I	Input voltage	CONT, RESET, THRES, and TRIG		V_CC	V
I_O	Output current			±200	mA
T_A	Operating free-air temperature	NA555	–40	105	°C
		NE555	0	70
		SA555	–40	85
		SE555	–55	125

7.4 Electrical Characteristics

V_CC = 5 V to 15 V, T_A = 25°C (unless otherwise noted)

PARAMETER	TEST CONDITIONS		SE555			NA555 NE555 SA555			UNIT
PARAMETER	TEST CONDITIONS		MIN	TYP	MAX	MIN	TYP	MAX	UNIT
THRES voltage level	V_CC = 15 V		9.4	10	10.6	8.8	10	11.2	V
THRES voltage level	V_CC = 5 V		2.7	3.3	4	2.4	3.3	4.2	V
THRES current⁽¹⁾				30	250		30	250	nA
TRIG voltage level	V_CC = 15 V		4.8	5	5.2	4.5	5	5.6	V
	V_CC = 15 V	T_A = –55°C to 125°C	3		6
	V_CC = 5 V		1.45	1.67	1.9	1.1	1.67	2.2
	V_CC = 5 V	T_A = –55°C to 125°C			1.9
TRIG current	TRIG at 0 V			0.5	0.9		0.5	2	μA
RESET voltage level			0.3	0.7	1	0.3	0.7	1	V
RESET voltage level	T_A = –55°C to 125°C				1.1				V
RESET current	RESET at V_CC			0.1	0.4		0.1	0.4	mA
RESET current	RESET at 0 V			–0.4	–1		–0.4	–1.5	mA
DISCH switch off-state current				20	100		20	100	nA
DISCH switch on-state voltage	V_CC = 5 V, I_O = 8 mA						0.15	0.4	V
CONT voltage (open circuit)	V_CC = 15 V		9.6	10	10.4	9	10	11	V
	V_CC = 15 V	T_A = –55°C to 125°C	9.6		10.4
	V_CC = 5 V		2.9	3.3	3.8	2.6	3.3	4
	V_CC = 5 V	T_A = –55°C to 125°C	2.9		3.8
Low-level output voltage	V_CC = 15 V, I_OL = 10 mA			0.1	0.15		0.1	0.25	V
	V_CC = 15 V, I_OL = 10 mA	T_A = –55°C to 125°C			0.2
	V_CC = 15 V, I_OL = 50 mA			0.4	0.5		0.4	0.75
	V_CC = 15 V, I_OL = 50 mA	T_A = –55°C to 125°C			1
	V_CC = 15 V, I_OL = 100 mA			2	2.2		2	2.5
	V_CC = 15 V, I_OL = 100 mA	T_A = –55°C to 125°C			2.7
	V_CC = 15 V, I_OL = 200 mA			2.5			2.5
	V_CC = 5 V, I_OL = 3.5 mA	T_A = –55°C to 125°C			0.35
	V_CC = 5 V, I_OL = 5 mA			0.1	0.2		0.1	0.35
	V_CC = 5 V, I_OL = 5 mA	T_A = –55°C to 125°C			0.8
	V_CC = 5 V, I_OL = 8 mA			0.15	0.25		0.15	0.4
High-level output voltage	V_CC = 15 V, I_OH = –100 mA		13	13.3		12.75	13.3		V
	V_CC = 15 V, I_OH = –100 mA	T_A = –55°C to 125°C	12
	V_CC = 15 V, I_OH = –200 mA			12.5			12.5
	V_CC = 5 V, I_OH = –100 mA		3	3.3		2.75	3.3
	V_CC = 5 V, I_OH = –100 mA	T_A = –55°C to 125°C	2
Supply current	Output low, No load	V_CC = 15 V		10	12		10	15	mA
	Output low, No load	V_CC = 5 V		3	5		3	6
	Output high, No load	V_CC = 15 V		9	10		9	13
	Output high, No load	V_CC = 5 V		2	4		2	5

(1) This parameter influences the maximum value of the timing resistors R_A and R_B in the circuit of Figure 12. For example,
when V_CC = 5 V, the maximum value is R = R_A + R_B ≉ 3.4 MΩ, and for V_CC = 15 V, the maximum value is 10 MΩ.

7.5 Operating Characteristics

V_CC = 5 V to 15 V, T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS⁽²⁾	SE555			NA555 NE555 SA555			UNIT
PARAMETER		TEST CONDITIONS⁽²⁾	MIN	TYP	MAX	MIN	TYP	MAX	UNIT
Initial error of timing interval⁽³⁾	Each timer, monostable⁽⁴⁾	T_A = 25°C		0.5	1.5⁽¹⁾		1	3	%
Initial error of timing interval⁽³⁾	Each timer, astable⁽⁵⁾			1.5			2.25		%
Temperature coefficient of timing interval	Each timer, monostable⁽⁴⁾	T_A = MIN to MAX		30	100⁽¹⁾		50		ppm/ °C
Temperature coefficient of timing interval	Each timer, astable⁽⁵⁾			90			150		ppm/ °C
Supply-voltage sensitivity of timing interval	Each timer, monostable⁽⁴⁾	T_A = 25°C		0.05	0.2⁽¹⁾		0.1	0.5	%/V
Supply-voltage sensitivity of timing interval	Each timer, astable⁽⁵⁾			0.15			0.3		%/V
Output-pulse rise time		C_L = 15 pF, T_A = 25°C		100	200⁽¹⁾		100	300	ns
Output-pulse fall time		C_L = 15 pF, T_A = 25°C		100	200⁽¹⁾		100	300	ns

(1) On products compliant to MIL-PRF-38535, this parameter is not production tested.

(2) For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions.

(3) Timing interval error is defined as the difference between the measured value and the average value of a random sample from each process run.

(4) Values specified are for a device in a monostable circuit similar to Figure 9, with the following component values: R_A = 2 kΩ to 100 kΩ, C = 0.1 μF.

(5) Values specified are for a device in an astable circuit similar to Figure 12, with the following component values: R_A = 1 kΩ to 100 kΩ, C = 0.1 μF.