ZHCS399E August 2011 – January 2017 OMAP-L132
PRODUCTION DATA.
High-speed (HS) bypass capacitors are critical for proper DDR2/mDDR interface operation. It is particularly important to minimize the parasitic series inductance of the HS bypass cap, Soc/DDR2/mDDR power, and Soc/DDR2/mDDR ground connections. Table 6-32 contains the specification for the HS bypass capacitors as well as for the power connections on the PCB.
NO. | PARAMETER | MIN | MAX | UNIT |
---|---|---|---|---|
1 | HS Bypass Capacitor Package Size(1) | 0402 | 10 Mils | |
2 | Distance from HS bypass capacitor to device being bypassed | 250 | Mils | |
3 | Number of connection vias for each HS bypass capacitor | 2(4) | Vias | |
4 | Trace length from bypass capacitor contact to connection via | 1 | 30 | Mils |
5 | Number of connection vias for each DDR2/mDDR device power or ground balls | 1 | Vias | |
6 | Trace length from DDR2/mDDR device power ball to connection via | 35 | Mils | |
7 | DDR_DVDD18 Supply HS Bypass Capacitor Count(2) | 10 | Devices | |
8 | DDR_DVDD18 Supply HS Bypass Capacitor Total Capacitance | 0.6 | μF | |
9 | DDR#1 HS Bypass Capacitor Count(2) | 8 | Devices | |
10 | DDR#1 HS Bypass Capacitor Total Capacitance | 0.4 | μF | |
11 | DDR#2 HS Bypass Capacitor Count(2)(3) | 8 | Devices | |
12 | DDR#2 HS Bypass Capacitor Total Capacitance(3) | 0.4 | μF |