SPRS563G September 2008 – June 2014 OMAP-L137
PRODUCTION DATA.
Supply voltage ranges | Core (CVDD, RVDD, RTC_CVDD, PLL0_VDDA ) (2) |
-0.5 V to 1.4 V |
I/O, 1.8V (USB0_VDDA18, USB1_VDDA18) (2) |
-0.5 V to 2 V | |
I/O, 3.3V (DVDD, USB0_VDDA33, USB1_VDDA33) (2) |
-0.5 V to 3.8V | |
Input voltage ranges | VI I/O, 1.2V (OSCIN, RTC_XI) |
-0.3 V to CVDD + 0.3V |
VI I/O, 3.3V (Steady State) |
-0.3V to DVDD + 0.35V | |
VI I/O, 3.3V (Transient) |
DVDD + 20% up to 20% of Signal Period |
|
VI I/O, USB 5V Tolerant Pins: (USB0_DM, USB0_DP, USB0_ID, USB1_DM, USB1_DP) |
5.25V(3) | |
VI I/O, USB0 VBUS | 5.50V(3) | |
Output voltage ranges | VO I/O, 3.3V (Steady State) |
-0.5 V to DVDD + 0.3V |
VO I/O, 3.3V (Transient Overshoot/Undershoot) |
20% of DVDD for up to 20% of the signal period |
|
Clamp Current | Input or Output Voltages 0.3V above or below their respective power rails. Limit clamp current that flows through the I/O's internal diode protection cells. | ±20mA |
Operating Junction Temperature ranges, TJ | Commercial | 0°C to 90°C |
Industrial (D suffix ) | -40°C to 90°C | |
Extended (A suffix) | -40°C to 105°C | |
Automotive (T suffix) | -40°C to 125°C |
UNIT | |||
---|---|---|---|
Storage temperature range, Tstg | (default) | -55 to 150 | °C |
ESD Stress Voltage, VESD(1) | Human Body Model (HBM)(2) | >2000 | V |
Charged Device Model (CDM)(3) | >500 | V |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
CVDD | Supply voltage, Core (CVDD, PLL0_VDDA) |
375 MHz versions | 1.14 | 1.2 | 1.32 | V |
456 MHz version | 1.25 | 1.3 | 1.35 | |||
RTC_CVDD (4) | Supply Voltage, RTC Core Logic | 375 MHz versions | 0.9 | 1.2 | 1.32 | V |
456 MHz version | 0.9 | 1.3 | 1.35 | |||
RVDD | Supply Voltage, Internal RAM | 375 MHz versions | 1.14 | 1.2 | 1.32 | V |
456 MHz version | 1.25 | 1.3 | 1.35 | |||
DVDD | Supply voltage, I/O, 1.8V (USB0_VDDA18, USB1_VDDA18) |
1.71 | 1.8 | 1.89 | V | |
Supply voltage, I/O, 3.3V (DVDD, USB0_VDDA33, USB1_VDDA33) |
3.0 | 3.3 | 3.45 | V | ||
VSS | Supply ground (VSS, PLL0_VSSA, OSCVSS(1), RTC_VSS(1)) |
0 | 0 | 0 | V | |
VIH(2) | High-level input voltage, I/O, 3.3V | 2 | V | |||
High-level input voltage, RTC_XI | 0.7*RTC_CVDD | V | ||||
High-level input voltage, OSCIN | 0.7*CVDD | |||||
VIL(2) | Low-level input voltage, I/O, 3.3V | 0.8 | V | |||
Low-level input voltage, RTC_XI | 0.3*RTC_CVDD | V | ||||
Low-level input voltage, OSCIN | 0.3*CVDD | |||||
VHYS | Input Hysteresis | 160 | mV | |||
USB | USB0_VBUS | 4.75 | 5 | 5.25 | V | |
tt | Transition time, 10%-90%, All Inputs (unless otherwise specified in the electrical data sections) | 0.25P or 10(3) | ns | |||
TA | Operating ambient temperature range |
Commercial | 0 | 70 | °C | |
Industrial (D suffix) | -40 | 70 | °C | |||
Extended (A suffix) | -40 | 85 | °C | |||
Automotive (T suffix) | -40 | 105 | °C | |||
FSYSCLK1,6 | DSP and ARM
Operating Frequency (SYSCLK1,6) |
Commercial | 0 | 375 / 456 | MHz | |
Industrial (D suffix) | 0 | 456 | MHz | |||
Extended (A suffix) | 0 | 375 | MHz | |||
Automotive (T suffix) | 0 | 375 | MHz |
The information in the section below is provided solely for your convenience and does not extend or modify the warranty provided under TI’s standard terms and conditions for TI semiconductor products.
To avoid significant degradation, the device power-on hours (POH) must be limited to the following:
Silicon Revision | Speed Grade | Operating Junction Temperature (Tj) | Nominal CVDD Voltage (V) | Power-On Hours [POH] (hours) |
---|---|---|---|---|
D | 300 MHz | 0 to 90 °C | 1.2V | 100,000 |
D | 300 MHz | 0 to 90 °C | 1.2V | 100,000 |
D | 375 MHz | 0 to 90 °C | 1.2V | 100,000 |
D | 375 MHz | -40 to 105 °C | 1.2V | 75,000(1) |
D | 375 MHz | -40 to 125 °C | 1.2V | 20,000 |
D | 456 MHz | 0 to 90 °C | 1.3V | 100,000 |
D | 456 MHz | -40 to 90 °C | 1.3V | 100,000 |
Note: Logic functions and parameter values are not assured out of the range specified in the recommended operating conditions.
The above notations cannot be deemed a warranty or deemed to extend or modify the warranty under TI’s standard terms and conditions for TI semiconductor products.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH(4) | High-level output voltage (3.3V I/O) | DVDD= 3.15V, IOH = -4 mA | 2.4 | V | ||
DVDD= 3.15V, IOH = 100 μA | 2.95 | V | ||||
VOL(4) | Low-level output voltage (3.3V I/O) | DVDD= 3.15V, IOL = 4mA | 0.4 | V | ||
DVDD= 3.15V, IOL = -100 μA | 0.2 | V | ||||
II
(2) , (4) |
Input current | VI = VSS to DVDD without opposing internal resistor | ±35 | μA | ||
VI = VSS to DVDD with opposing internal pullup resistor (1) | -30 | -200 | μA | |||
VI = VSS to DVDD with opposing internal pulldown resistor (1) | 50 | 300 | μA | |||
VI = VSS to USB1_VDDA33 - USB1_DM and USB1_DP |
±40 | μA | ||||
IOH(4) | High-level output current | -4 | mA | |||
IOL(4) | Low-level output current | 4 | mA | |||
IOZ(3) | I/O Off-state output current | VO = VDD or VSS; Internal pull disabled | ±35 | μA | ||
CI | Input capacitance | LVCMOS signals | 3 | pF | ||
OSCIN and RTC_XI | 2 | pF | ||||
CO | Output capacitance | LVCMOS signals | 3 | pF |