ZHCSGB7A June   2017  – November 2017 OPA1641-Q1 , OPA1642-Q1

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化内部原理图
      2.      极为稳定的输入电容
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions: OPA1641-Q1
    2.     Pin Functions: OPA1642-Q1
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Phase Reversal Protection
      2. 7.3.2 Output Current Limit
      3. 7.3.3 EMI Rejection Ratio (EMIRR)
        1. 7.3.3.1 EMIRR IN+ Test Configuration
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operating Voltage
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Total Harmonic Distortion Measurements
      2. 8.1.2 Source Impedance and Distortion
      3. 8.1.3 Capacitive Load and Stability
      4. 8.1.4 Power Dissipation and Thermal Protection
      5. 8.1.5 Electrical Overstress
    2. 8.2 Typical Application
      1. 8.2.1 Single-Supply Electret Microphone Preamplifier for Speech
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 TINA-TI(免费软件下载)
        2. 11.1.1.2 TI 高精度设计
        3. 11.1.1.3 WEBENCH® 滤波器设计器
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 相关链接
    4. 11.4 接收文档更新通知
    5. 11.5 社区资源
    6. 11.6 商标
    7. 11.7 静电放电警告
    8. 11.8 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Overstress

Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress. These questions tend to focus on the device inputs, but can involve the supply voltage pins or even the output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from accidental ESD events both before and during product assembly.

Having a good understanding of this basic ESD circuitry and the relevance to an electrical overstress event is helpful. Figure 36 illustrates the ESD circuits contained in the OPA164x-Q1 series (indicated by the dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input and output pins and routed back to the internal power-supply lines where an internal absorption device is connected. This protection circuitry is intended to remain inactive during normal circuit operation.

An ESD event produces a short-duration, high-voltage pulse that is transformed into a short-duration, high-current pulse when discharging through a semiconductor device. The ESD protection circuits are designed to provide a current path around the operational amplifier core to prevent damage. The energy absorbed by the protection circuitry is then dissipated as heat.

When an ESD voltage develops across two or more of the amplifier device pins, current flows through one or more of the steering diodes. Depending on the path that the current takes, the absorption device can activate. The absorption device has a trigger (or threshold voltage) that is above the normal operating voltage of the OPA164x-Q1 but below the device breakdown voltage level. When this threshold is exceeded, the absorption device quickly activates and clamps the voltage across the supply rails to a safe level.

When the operational amplifier connects into a circuit as shown in Figure 36, the ESD protection components are intended to remain inactive and not become involved in the application circuit operation. However, circumstances can arise where an applied voltage exceeds the operating voltage range of a given pin. If this condition occurs, some of the internal ESD protection circuits can be biased on and conduct current. Any such current flow occurs through steering diode paths and rarely involves the absorption device.

Figure 36 depicts a specific example where the input voltage (VIN) exceeds the positive supply voltage (+VS) by 500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If +VS can sink the current, one of the upper input steering diodes conducts and directs current to +VS. Excessively high current levels can flow with increasingly higher VIN. As a result, the data sheet specifications recommend that applications limit the input current to 10 mA.

If the supply is not capable of sinking the current, VIN can begin sourcing current to the operational amplifier, and then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to levels that exceed the operational amplifier absolute maximum ratings.

Another common question involves what happens to the amplifier if an input signal is applied to the input when the power supplies +VS and –VS are at 0 V. The amplifier behavior depends on the supply characteristic when at 0 V, or at a level below the input signal amplitude. If the supplies appear as high impedance, then the operational amplifier supply current can be supplied by the input source through the current steering diodes. This state is not a normal bias condition; the amplifier most likely does not operate normally. If the supplies are low impedance, then the current through the steering diodes can become quite high. The current level depends on the ability of the input source to deliver current and any resistance in the input path.

If there is an uncertainty about the ability of the supply to absorb this current, external Zener diodes can be added to the supply pins, as shown in Figure 36. The Zener voltage must be selected so the diode does not turn on during normal operation. However, the Zener voltage must be low enough so that the Zener diode conducts if the supply pin begins to rise above the safe operating supply voltage level.

OPA1641-Q1 OPA1642-Q1 ai_equiv_esd_cir_bos791.gif
VIN = +VS + 500 mV.
TVS: +VS(max) > VTVSBR (Min) > +VS
Suggested value is approximately 1 kΩ.
Figure 36. Equivalent Internal ESD Circuitry and the Relation to a Typical Circuit Application