ZHCS372C August   2011  – June 2016 OPA2188

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Zero-Drift Amplifier Portfolio
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: High-Voltage Operation, VS = ±4 V to ±18 V (VS = 8 V to 36 V)
    6. 7.6 Electrical Characteristics: Low-Voltage Operation, VS = ±2 V to < ±4 V (VS = +4 V to < +8 V)
    7. 7.7 Typical Characteristics: Table of Graphs
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Characteristics
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Phase-Reversal Protection
      4. 8.3.4 Capacitive Load and Stability
      5. 8.3.5 Electrical Overstress
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 High-Side Voltage-to-Current (V-I) Converter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 System Examples
      1. 9.3.1 Discrete INA + Attenuation for ADC With 3.3-V Supply
      2. 9.3.2 RTD Amplifier with Linearization
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
        1. 12.1.1.1 TINA-TI™（免费软件下载）
        2. 12.1.1.2 DIP 适配器 EVM
        3. 12.1.1.3 通用运放 EVM
        4. 12.1.1.4 TI 高精度设计
        5. 12.1.1.5 WEBENCH滤波器设计器
    2. 12.2 文档支持
      1. 12.2.1 相关文档　
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply voltage ±20, 40
(single supply)		 V
Signal input terminals, voltage(2) (V–) – 0.5 (V+) + 0.5 V
Current Signal input terminals, current(2) –10 10 mA
Output short-circuit(3) Continuous
Temperature Operating, TA –55 125 °C
Junction, TJ 150 °C
Storage, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should be current-limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VS Supply voltage 4 (±2) 36 (±18) V
TA Specified temperature range -40 +105 °C

7.4 Thermal Information

THERMAL METRIC(1) OPA2188ID OPA2188IDGK UNIT
D (SOIC) DGK (VSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 111 159.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.9 37.4 °C/W
RθJB Junction-to-board thermal resistance 51.7 48.5 °C/W
ψJT Junction-to-top characterization parameter 9.3 1.2 °C/W
ψJB Junction-to-board characterization parameter 51.1 77.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

7.5 Electrical Characteristics: High-Voltage Operation, VS = ±4 V to ±18 V (VS = 8 V to 36 V)

at TA = 25°C, RL = 10 kΩ connected to VS/2, and VCOM = VOUT = VS/2, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage 6 25 μV
TA = –40°C to +105°C 0.03 0.085 μV/°C
PSRR Power-supply rejection ratio VS = 4 V to 36 V, VCM = VS / 2 0.075 0.3 μV/V
VS = 4 V to 36 V, VCM = VS / 2,
TA = –40°C to +105°C		 0.3 μV/V
Long-term stability 4(1) μV
Channel separation, DC 1 μV/V
INPUT BIAS CURRENT
IB Input bias current VCM = VS / 2 ±160 ±850 pA
TA = –40°C to +105°C ±18 nA
IOS Input offset current ±320 ±1700 pA
TA = –40°C to +105°C ±6 nA
NOISE
en Input voltage noise f = 0.1 Hz to 10 Hz 0.25 μVPP
en Input voltage noise density f = 1 kHz 8.8 nV/√Hz
in Input current noise density f = 1 kHz 7 fA/√Hz
INPUT VOLTAGE RANGE
VCM Common-mode voltage V– (V+) – 1.5 V
CMRR Common-mode rejection ratio (V–) < VCM < (V+) – 1.5 V 120 134 dB
(V–) + 0.5 V < VCM < (V+) – 1.5 V,
VS = ±18 V		 130 146 dB
(V–) + 0.5 V < VCM < (V+) – 1.5 V,
VS = ±18 V, TA = –40°C to +105°C		 120 126 dB
INPUT IMPEDANCE
Differential 100 || 6 MΩ || pF
Common-mode 6 || 9.5 1012 Ω || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain (V–) + 500 mV < VO < (V+) – 500 mV,
RL = 10 kΩ		 130 136 dB
(V–) + 500 mV < VO < (V+) – 500 mV,
RL = 10 kΩ, TA = –40°C to +105°C		 120 126 dB
FREQUENCY RESPONSE
GBW Gain-bandwidth product 2 MHz
SR Slew rate G = +1 0.8 V/μs
Settling time, 0.1% VS = ±18 V, G = 1, 10-V step 20 μs
Settling time, 0.01% VS = ±18 V, G = 1, 10-V step 27 μs
Overload recovery time VIN × G = VS 1 μs
THD+N Total harmonic distortion + noise 1 kHz, G = 1, VOUT = 1 VRMS 0.0001 %
OUTPUT
Voltage output swing from rail No load 6 15 mV
RL = 10 kΩ 220 250 mV
RL = 10 kΩ, TA = –40°C to +105°C 310 350 mV
ISC Short-circuit current ±18 mA
RO Open-loop output resistance f = 1 MHz, IO = 0 120 Ω
CLOAD Capacitive load drive 1 nF
POWER SUPPLY
VS Operating voltage 4 to 36 (±2 to ±18) V
IQ Quiescent current (per amplifier) VS = ±4 V to VS = ±18 V 415 510 μA
IO = 0 mA, TA = –40°C to +105°C 600 μA
(1) 1000-hour life test at +125°C demonstrated randomly distributed variation in the range of measurement limits—approximately 4 μV.

7.6 Electrical Characteristics: Low-Voltage Operation, VS = ±2 V to < ±4 V (VS = +4 V to < +8 V)

at TA = 25°C, RL = 10 kΩ connected to VS/2, and VCOM = VOUT = VS/2, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage 6 25 μV
TA = –40°C to +105°C 0.03 0.085 μV/°C
PSRR Power-supply rejection ratio VS = 4 V to 36 V, VCM = VS / 2 0.075 0.3 μV/V
VS = 4 V to 36 V, VCM = VS / 2,
TA = –40°C to +105°C		 0.3 μV/V
Long-term stability 4(1) μV
Channel separation, dc 1 μV/V
INPUT BIAS CURRENT
IB Input bias current VCM = VS / 2 ±160 ±850 pA
TA = –40°C to +105°C ±18 nA
IOS Input offset current ±320 ±1700 pA
TA = –40°C to +105°C ±6 nA
NOISE
en Input voltage noise f = 0.1 Hz to 10 Hz 0.25 μVPP
Input voltage noise density f = 1 kHz 8.8 nV/√Hz
in Input current noise density f = 1 kHz 7 fA/√Hz
INPUT VOLTAGE RANGE
VCM Common-mode voltage range TA = –40°C to +105°C V– (V+) – 1.5 V
CMRR Common-mode rejection ratio (V–) < VCM < (V+) – 1.5 V 106 114 dB
(V–) + 0.5 V < VCM < (V+) – 1.5 V,
VS = ±2 V		 114 120 dB
(V–) + 0.5 V < VCM < (V+) – 1.5 V,
VS = ±2 V, TA = –40°C to +105°C		 110 120 dB
INPUT IMPEDANCE
Differential 100 || 6 MΩ || pF
Common-mode 6 || 95 1012 Ω || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain (V–) + 500 mV < VO < (V+) – 500 mV,
RL = 5 kΩ, VS = 5 V		 110 120 dB
(V–) + 500 mV < VO < (V+) – 500 mV,
RL = 10 kΩ		 120 130 dB
(V–) + 500 mV < VO < (V+) – 500 mV,
RL = 10 kΩ, TA = –40°C to +105°C		 114 120 dB
FREQUENCY RESPONSE
GBW Gain-bandwidth product 2 MHz
SR Slew rate G = +1 0.8 V/μs
Overload recovery time VIN × G = VS 1 μs
THD+N Total harmonic distortion + noise 1 kHz, G = 1, VOUT = 1 VRMS 0.0001 %
OUTPUT
Voltage output swing from rail No load 6 15 mV
RL = 10 kΩ 220 250 mV
RL = 10 kΩ, TA = –40°C to +105°C 310 350 mV
ISC Short-circuit current ±18 mA
RO Open-loop output resistance f = 1 MHz, IO = 0 120 Ω
CLOAD Capacitive load drive 1 nF
POWER SUPPLY
VS Operating voltage range 4 to 36 (±2 to ±18) V
IQ Quiescent current (per amplifier) VS = ±2 V to VS = ±4 V 385 485 μA
IO = 0 mA, TA = –40°C to +105°C 590 μA
TEMPERATURE RANGE
Specified temperature range –40 105 °C
TA Operating temperature range –40 125 °C
Tstg Storage temperature –65 150 °C
(1) 1000-hour life test at +125°C demonstrated randomly distributed variation in the range of measurement limits—approximately 4 μV.

7.7 Typical Characteristics: Table of Graphs

Table 1. Characteristic Performance Measurements

DESCRIPTION FIGURE NO.
Offset Voltage Production Distribution Figure 1
Offset Voltage Drift Distribution Figure 2
Offset Voltage vs Temperature Figure 3
Offset Voltage vs Common-Mode Voltage Figure 4, Figure 5
Offset Voltage vs Power Supply Figure 6
IB and IOS vs Common-Mode Voltage Figure 7
Input Bias Current vs Temperature Figure 8
Output Voltage Swing vs Output Current (Maximum Supply) Figure 9
CMRR and PSRR vs Frequency (Referred-to-Input) Figure 10
CMRR vs Temperature Figure 11, Figure 12
PSRR vs Temperature Figure 13
0.1-Hz to 10-Hz Noise Figure 14
Input Voltage Noise Spectral Density vs Frequency Figure 15
THD+N Ratio vs Frequency Figure 16
THD+N vs Output Amplitude Figure 17
Quiescent Current vs Supply Voltage Figure 18
Quiescent Current vs Temperature Figure 19
Open-Loop Gain and Phase vs Frequency Figure 20
Closed-Loop Gain vs Frequency Figure 21
Open-Loop Gain vs Temperature Figure 22
Open-Loop Output Impedance vs Frequency Figure 23
Small-Signal Overshoot vs Capacitive Load (100-mV Output Step) Figure 24, Figure 25
No Phase Reversal Figure 26
Positive Overload Recovery Figure 27
Negative Overload Recovery Figure 28
Small-Signal Step Response (100 mV) Figure 29, Figure 30
Large-Signal Step Response Figure 31, Figure 32
Large-Signal Settling Time (10-V Positive Step) Figure 33
Large-Signal Settling Time (10-V Negative Step) Figure 34
Short-Circuit Current vs Temperature Figure 35
Maximum Output Voltage vs Frequency Figure 36
Channel Separation vs Frequency Figure 37
EMIRR IN+ vs Frequency Figure 38

7.8 Typical Characteristics

VS = ±18 V, VCM = VS/2, RLOAD = 10 kΩ connected to VS/2, and CL = 100 pF, unless otherwise noted.
OPA2188 tc_histo_voff_bos525.gif
Figure 1. Offset Voltage Production Distribution
OPA2188 tc_vo-tmp_bos525.gif
Figure 3. Offset Voltage vs Temperature
OPA2188 tc_vos-vcm_18v_bos525.gif
Figure 5. Offset Voltage vs Common-Mode Voltage
OPA2188 tc_ib_ios-vcm_bos525.gif
Figure 7. IB and IOS vs Common-Mode Voltage
OPA2188 tc_vo_swing-io_bos525.gif
Figure 9. Output Voltage Swing vs Output Current (Maximum Supply)
OPA2188 tc_cmrr-tmp_2v_bos525.gif
Figure 11. CMRR vs Temperature
OPA2188 tc_psrr-tmp_bos525.gif
Figure 13. PSRR vs Temperature
OPA2188 tc_noise_spec-frq_bos525.gif
Figure 15. Input Voltage Noise Spectral Density vs Frequency
OPA2188 tc_thdn-outamp_bos525.gif
Figure 17. THD+N vs Output Amplitude
OPA2188 tc_iq-tmp_bos525.gif
Figure 19. Quiescent Current vs Temperature
OPA2188 tc_cloop_g-frq_bos525.gif
Figure 21. Closed-Loop Gain vs Frequency
OPA2188 tc_oloop_iout-frq_bos525.gif
Figure 23. Open-Loop Output Impedance vs Frequency
OPA2188 tc_sm_oshoot-cl_neg_bos525.gif
Figure 25. Small-Signal Overshoot vs Capacitive Load (100-mV Output Step)
OPA2188 tc_oload_pos_bos525.gif
Figure 27. Positive Overload Recovery
OPA2188 tc_sm_step_pos_bos525.gif
Figure 29. Small-Signal Step Response (100 mV)
OPA2188 tc_lg_step_pos_bos525.gif
Figure 31. Large-Signal Step Response
OPA2188 tc_lg_t_pos_bos525.gif
Figure 33. Large-Signal Settling Time (10-V Positive Step)
OPA2188 tc_isc-tmp_bos525.gif
Figure 35. Short-Circuit Current vs Temperature
OPA2188 tc_ch_sep-frq_bos525.gif
Figure 37. Channel Separation vs Frequency
OPA2188 tc_histo_voff_drift_bos525.gif
Figure 2. Offset Voltage Drift Distribution
OPA2188 tc_vos-vcm_2v_bos525.gif
Figure 4. Offset Voltage vs Common-Mode Voltage
OPA2188 tc_vos-vsupply_bos525.gif
Figure 6. Offset Voltage vs Power Supply
OPA2188 tc_ibias-tmp_bos525.gif
Figure 8. Input Bias Current vs Temperature
OPA2188 tc_cmrr_psrr-frq_bos525.gif
Figure 10. CMRR and PSRR vs Frequency (Referred-to-Input)
OPA2188 tc_cmrr-tmp_18v_bos525.gif
Figure 12. CMRR vs Temperature
OPA2188 tc_noise_bos525.gif
Figure 14. 0.1-Hz to 10-Hz Noise
OPA2188 tc_thdn-frq_bos525.gif
Figure 16. THD+N Ratio vs Frequency
OPA2188 tc_iq-vs_bos525.gif
Figure 18. Quiescent Current vs Supply Voltage
OPA2188 tc_g_ph-frq_bos525.png
Figure 20. Open-Loop Gain and Phase vs Frequency
OPA2188 tc_oloop_g-tmp_bos525.gif
Figure 22. Open-Loop Gain vs Temperature
OPA2188 tc_sm_oshoot-cl_pos_bos525.gif
Figure 24. Small-Signal Overshoot vs Capacitive Load (100-mV Output Step)
OPA2188 tc_no_phase_bos525.gif
Figure 26. No Phase Reversal
OPA2188 tc_oload_neg_bos525.gif
Figure 28. Negative Overload Recovery
OPA2188 tc_sm_step_neg_bos525.gif
Figure 30. Small-Signal Step Response (100 mV)
OPA2188 tc_lg_step_neg_bos525.gif
Figure 32. Large-Signal Step Response
OPA2188 tc_lg_t_neg_bos525.gif
Figure 34. Large-Signal Settling Time (10-V Negative Step)
OPA2188 tc_max_vo-frq_bos525.gif
Figure 36. Maximum Output Voltage vs Frequency
OPA2188 tc_emirr-frq_bos525.gif
Figure 38. EMIRR IN+ vs Frequency
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