ZHCS020J January   2011  – March 2021 OPA2835 , OPA835

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparision Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: OPA835
    5. 7.5 Thermal Information: OPA2835
    6. 7.6 Electrical Characteristics: VS = 2.7 V
    7. 7.7 Electrical Characteristics: VS = 5 V
    8. 7.8 Typical Characteristics: VS = 2.7 V
    9. 7.9 Typical Characteristics: VS = 5 V
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Common-Mode Voltage Range
      2. 8.3.2 Output Voltage Range
      3. 8.3.3 Power-Down Operation
      4. 8.3.4 Low-Power Applications and the Effects of Resistor Values on Bandwidth
      5. 8.3.5 Driving Capacitive Loads
    4. 8.4 Device Functional Modes
      1. 8.4.1 Split-Supply Operation (±1.25 V to ±2.75 V)
      2. 8.4.2 Single-Supply Operation (2.5 V to 5.5 V)
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1  Noninverting Amplifier
      2. 9.1.2  Inverting Amplifier
      3. 9.1.3  Instrumentation Amplifier
      4. 9.1.4  Attenuators
      5. 9.1.5  Single-Ended to Differential Amplifier
      6. 9.1.6  Differential to Single-Ended Amplifier
      7. 9.1.7  Differential-to-Differential Amplifier
      8. 9.1.8  Gain Setting With OPA835 RUN Integrated Resistors
      9. 9.1.9  Pulse Application With Single-Supply
      10. 9.1.10 ADC Driver Performance
    2. 9.2 Typical Application
      1. 9.2.1 Audio Frequency Performance
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Active Filters
        1. 9.2.2.1 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 支持资源
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.