ZHCSQQ7B June   2022  – November 2022 OPA4991-EP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 四通道器件的热性能信息
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Protection Circuitry
      2. 7.3.2 EMI Rejection
      3. 7.3.3 Thermal Protection
      4. 7.3.4 Capacitive Load and Stability
      5. 7.3.5 Common-Mode Voltage Range
      6. 7.3.6 Phase Reversal Protection
      7. 7.3.7 Electrical Overstress
      8. 7.3.8 Overload Recovery
      9. 7.3.9 Typical Specifications and Distributions
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Low-Side Current Measurement
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 TINA-TI (Free Software Download)
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 术语表
  10. 10Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

6.5 Electrical Characteristics

For VS = (V+) – (V–) = 2.7 V to 40 V (±1.35 V to ±20 V) at TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and
VOUT = VS / 2, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VCM = V– ±125 ±895 µV
TA = –-55°C to 125°C ±925
dVOS/dT Input offset voltage drift TA = –-55°C to 125°C ±0.3 µV/℃
PSRR Input offset voltage versus power supply VCM = V–, VS = 4 V to 40 V TA = –-55°C to 125°C ±0.3 ±1 µV/V
VCM = V–, VS = 2.7 V to 40 V(2) ±1 ±5
Channel separation f = 0 Hz 5 µV/V
INPUT BIAS CURRENT
IB Input bias current ±10 pA
IOS Input offset current ±10 pA
NOISE
EN Input voltage noise f = 0.1 Hz to 10 Hz   1.8 µVPP
  0.3   µVRMS
eN Input voltage noise density f = 1 kHz 10.8   nV/√Hz
f = 10 kHz   9.4  
iN Input current noise f = 1 kHz   82   fA/√Hz
INPUT VOLTAGE RANGE
VCM Common-mode voltage range (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio VS = 40 V, (V–) – 0.1 V < VCM < (V+) – 2 V (Main input pair) TA = –-55°C to 125°C 107 130 dB
VS = 4 V, (V–) – 0.1 V < VCM < (V+) – 2 V (Main input pair) 82 100
VS = 2.7 V, (V–) – 0.1 V < VCM < (V+) – 2 V (Main input pair)(2) 75 95
VS = 2.7 V to 40 V, (V+) – 1 V < VCM < (V+) + 0.1 V (Aux input pair) 85
INPUT CAPACITANCE
ZID Differential 100 || 9 MΩ || pF
ZICM Common-mode 6 || 1 TΩ || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain VS = 40 V, VCM = V–
(V–) + 0.1 V < VO < (V+) –  0.1 V		 120 145 dB
TA = –-55°C to 125°C 142
VS = 4 V, VCM = V–
(V–) + 0.1 V < VO < (V+) –  0.1 V		 104 130
TA = –-55°C to 125°C 125
VS = 2.7 V, VCM = V–
(V–) + 0.1 V < VO < (V+) –  0.1 V(2)		 101 120
TA = –-55°C to 125°C 118
FREQUENCY RESPONSE
GBW Gain-bandwidth product 4.5 MHz
SR Slew rate VS = 40 V, G = +1, CL = 20 pF 21 V/µs
tS Settling time To 0.01%, VS = 40 V, VSTEP = 10 V , G = +1, CL = 20 pF 2.5 µs
To 0.01%, VS = 40 V, VSTEP = 2 V , G = +1, CL = 20 pF 1.5
To 0.1%, VS = 40 V, VSTEP = 10 V , G = +1, CL = 20 pF 2
To 0.1%, VS = 40 V, VSTEP = 2 V , G = +1, CL = 20 pF 1
Phase margin G = +1, RL = 10 kΩ, CL = 20 pF 60 °
Overload recovery time VIN  × gain > VS 400 ns
THD+N Total harmonic distortion + noise (1) VS = 40 V, VO = 3 VRMS, G = 1, f = 1 kHz 0.00021%
OUTPUT
  Voltage output swing from rail Positive and negative rail headroom VS = 40 V, RL = no load(2)   5 10 mV
VS = 40 V, RL = 10 kΩ   50 70
VS = 40 V, RL = 2 kΩ   300 350
VS = 2.7 V, RL = no load(2)   1 6
VS = 2.7 V, RL = 10 kΩ   5 12
VS = 2.7 V, RL = 2 kΩ   25 40
ISC Short-circuit current ±75 mA
CLOAD Capacitive load drive 1000
 pF
ZO Open-loop output impedance f = 1 MHz, IO = 0 A 525 Ω
POWER SUPPLY
IQ Quiescent current per amplifier VCM = V–, IO = 0 A 560 685 µA
TA = –-55°C to 125°C 750
(1) Third-order filter; bandwidth = 80 kHz at –3 dB.
(2) Specified by characterization only.
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