ZHCSIQ9 September 2018 OPA859
PRODUCTION DATA.
The OPA859 is fabricated on a low-voltage, high-speed, BiCMOS process. The internal, junction breakdown voltages are low for these small geometry devices, and as a result, all device pins are protected with internal ESD protection diodes to the power supplies as Figure 49 shows. There are two antiparallel diodes between the inputs of the amplifier that clamp the inputs during an overrange or fault condition.