ZHCSNI6A March   2023  – April 2024 OPA928

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: 4.5V ≤ VS < 8V
    6. 5.6 Electrical Characteristics: 8V ≤ VS ≤ 16V
    7. 5.7 Electrical Characteristics: 16V < VS ≤ 36V
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Guard Buffer
      2. 6.3.2 Input Protection
      3. 6.3.3 Thermal Protection
      4. 6.3.4 Capacitive Load and Stability
      5. 6.3.5 EMI Rejection
      6. 6.3.6 Common-Mode Voltage Range
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Contamination Considerations
      2. 7.1.2 Guarding Considerations
      3. 7.1.3 Single-Supply Considerations
      4. 7.1.4 Humidity Considerations
      5. 7.1.5 Dielectric Relaxation
      6. 7.1.6 Shielding
    2. 7.2 Typical Applications
      1. 7.2.1 High-Impedance Amplifier
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Transimpedance Amplifier
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Input Bias
          2. 7.2.2.2.2 Offset Voltage
          3. 7.2.2.2.3 Stability
          4. 7.2.2.2.4 Noise
      3. 7.2.3 Improved Diode Limiter
      4. 7.2.4 Instrumentation Amplifier
    3. 7.3 Power-Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 PSpice® for TI
        2. 8.1.1.2 TINA-TI™ 仿真软件(免费下载)
        3. 8.1.1.3 TI 参考设计
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 接收文档更新通知
    4. 8.4 支持资源
    5. 8.5 Trademarks
    6. 8.6 静电放电警告
    7. 8.7 术语表
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Dielectric Relaxation

All materials are prone to polarization in the presence of an electric field. The molecules of the given material within the electric field become aligned at varying rates; a phenomena known as polarization. The rate depends on the strength of the electric field and the susceptibility of the material. When the electric field is removed, the molecules in the material return to the original alignment and random distribution, a phenomena known as relaxation. The rate at which the molecules return to normal alignment depends on the permittivity and resistivity of the material. In conductors, polarization and relaxation happens nearly instantaneously. In dielectrics, the time delay for polarization and relaxation can be significant.

In most applications, dielectric relaxation is not a major design concern. However, for femtoampere leakage current, dielectric relaxation becomes a major concern. The realignment of molecules causes a small displacement current to appear across the material. The displacement current from the dielectric relaxation is often greater than the input bias current level of the OPA928. The time required for the displacement current in common FR-4 PCB materials to dissipate under the input bias current level of the OPA928 can take well over an hour. The ingression of moisture into the dielectric material can significantly increase the relaxation time. To minimize the dielectric relaxation time and the leakage effects, use ceramic-based PCB materials such as Rogers 4350B and consider implementing a baking process to remove excess moisture.