ZHCSE82B June   2015  – October 2015 OPT8241

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Optical Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Block
        1. 7.3.1.1 Serializer and LVDS Output Interface
        2. 7.3.1.2 Parallel CMOS Output Interface
      2. 7.3.2 Temperature Sensor
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Presence Detection for Industrial Safety
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Frequencies of Operation
          2. 8.2.1.2.2 Number of Sub-Frames and Quads
          3. 8.2.1.2.3 Field of View (FoV)
          4. 8.2.1.2.4 Lens
          5. 8.2.1.2.5 Integration Duty Cycle
          6. 8.2.1.2.6 Design Summary
        3. 8.2.1.3 Application Curve
      2. 8.2.2 People Counting and Locating
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Frequencies of Operation
          2. 8.2.2.2.2 Number of Sub-Frames and Quads
          3. 8.2.2.2.3 Field of View (FoV)
          4. 8.2.2.2.4 Lens
          5. 8.2.2.2.5 Integration Duty Cycle
          6. 8.2.2.2.6 Design Summary
        3. 8.2.2.3 Application Curve
      3. 8.2.3 People Locating and Identification
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
          1. 8.2.3.2.1 Frequencies of Operation
          2. 8.2.3.2.2 Number of Sub-Frames and Quads
          3. 8.2.3.2.3 Field of View (FoV)
          4. 8.2.3.2.4 Lens
          5. 8.2.3.2.5 Integration Duty Cycle
          6. 8.2.3.2.6 Design Summary
        3. 8.2.3.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 MIX Supply Decapacitors
      2. 10.1.2 LVDS Transmitters
      3. 10.1.3 Optical Centering
      4. 10.1.4 Image Orientation
      5. 10.1.5 Thermal Considerations
    2. 10.2 Layout Example
    3. 10.3 Mechanical Assembly Guidelines
      1. 10.3.1 Board-Level Reliability
      2. 10.3.2 Handling
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
IOVDD Digital I/O supply –0.3 4.0 V
AVDDH Analog supply –0.3 4.0 V
DVDDH Digital I/O supply –0.3 4.0 V
PVDD Pixel supply –0.3 4.0 V
AVDD Analog supply –0.3 2.2 V
VMIXH Mix supply –0.3 2.5 V
DVDD Digital supply –0.3 2.2 V
AVDD_PLL PLL supply –0.3 2.2 V
VI Input voltage at input pins –0.3 VCC + 0.3(2) V
TJ Operating junction temperature 0 125 °C
Tstg Storage temperature –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VCC refers to the I/O bank voltage.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
IOVDD Digital I/O supply 1.7 1.8 to 3.3 3.6 V
AVDDH Analog supply 3.0 3.3 3.6 V
DVDDH Digital I/O supply 3.0 3.3 3.6 V
PVDD Pixel supply 3.0 3.3 3.6 V
AVDD Analog supply 1.7 1.8 1.9 V
VMIXH Mix supply 1.4 1.5 2.0 V
DVDD Digital supply 1.7 1.8 1.9 V
AVDD_PLL PLL supply 1.7 1.8 1.9 V
TA Operating ambient temperature 0 70 °C

6.4 Thermal Information

THERMAL METRIC(1) OPT8241 UNIT
NBN (COG)
78 PINS
RθJA Junction-to-ambient thermal resistance Without underfill 79.2 °C/W
With underfill 41.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 18.6 °C/W
RθJB Junction-to-board thermal resistance 51.0 °C/W
ψJT Junction-to-top characterization parameter 6.3 °C/W
ψJB Junction-to-board characterization parameter 51.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 18.6 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

All specifications at TA = 25°C, VAVDDH = 3.3 V, VAVDD = 1.8 V, VVMIXH = 1.5 V, VDVDD = 1.8 V, VDVDDH = 3.3 V, VPVDD = 3.3 V, VSUB_BIAS = 0 V, integration duty cycle = 10%, system clock frequency = 48 MHz, modulation frequency = 50 MHz, and 850 nm illumination, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SENSOR
V Maximum rows 240 Rows
H Maximum columns 320 Columns
PP Pixel pitch 15 μm
POWER (Normal Operation)
IAVDD_PLL PLL supply current 9 mA
IAVDD Analog supply current Without dynamic power-down 40 mA
With dynamic power-down 20
IDVDDH 3.3-V digital supply current 5 mA
IAVDDH 3.3-V analog supply current Without dynamic power-down 17 mA
With dynamic power-down 7
IPVDD Pixel VDD current 2 mA
IVMIXH Demodulation current 10% integration duty cycle 70 mA
100% integration duty cycle 600
IIOVDD I/O supply current (CMOS mode) 20 mA
I/O supply current (LVDS mode) 2
IDVDD Digital supply current 45 mA
POWER (Standby)
IIOVDD I/O supply current 0.7 mA
IAVDD_PLL PLL supply current 0.3 mA
IAVDD Analog supply current 0.3 mA
IDVDD Digital supply current 0.6 mA
IDVDDH 3.3-V digital supply current 1.1 mA
IAVDDH 3.3-V analog supply current 0.2 mA
IVMIXH Demodulation current 0 mA
IPVDD Pixel VDD current 0 mA
CMOS I/Os
VIH Input high-level threshold 0.7 × VCC(1) V
VIL Input low-level threshold 0.3 × VCC(1) V
VOH Output high level IOH = –2 mA VCC(1) – 0.45 V
IOH = –8 mA VCC(1) – 0.5
VOL Output Low Level IOL = 2 mA 0.35 V
IOL = 8 mA 0.65
II Input pin leakage current Pins with pullup, pulldown resistor ±50 µA
Pins without pullup, pulldown resistor ±10
CI Input capacitance 5 pF
IOH Output current 10 mA
IOL 10
(1) VCC is equal to IOVDD or DVDDH, based on the I/O bank listed in the Pin Functions table.

6.6 Timing Requirements

MIN NOM MAX UNIT
MCLK duty cycle 48% 52%
MCLK frequency 12 50 MHz
VD_IN pulse duration 2 × MCLK period ns
RTSZ low pulse duration (reset) 100 ns

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted); VDVDD = 1.8 V, VDVDDH = 3.3 V, and VIOVDD = 1.8 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DDR LVDS MODE
tSU Data setup time Data valid to zero crossing of DCLKP, DCLKM 0.48 ns
tH Data hold time Zero crossing of DCLKP, DCLKM to data becoming invalid 0.54 ns
tFALL, tRISE Data fall time, data rise time Rise time measured from –100 mV to +100 mV 0.35 ns
tCLKRISE, tCLKFALL Output clock rise time,
output clock fall time		 Rise time measured from –100 mV to +100 mV 0.35 ns
PARALLEL CMOS MODE
tSU Data setup time Data valid to zero crossing of CLKOUT 1.5 ns
tH Data hold time Zero crossing of CLKOUT to data becoming invalid 3.5 ns
tFALL, tRISE Data fall time, data rise time Rise time measured from 30% to 70% of IOVDD 2.5 ns
tCLKRISE, tCLKFALL Output clock rise time,
output clock fall time		 Rise time measured from 30% to 70% of IOVDD 2.2 ns

6.8 Optical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Glass side Top Side
Passband
(50% relative transmittance(1)) 		0° incident angle 813 to 893 nm
30° incident angle 798 to 877 nm
Passband
(90% relative transmittance(1))		 0° incident angle 830 to 881 nm
30° incident angle 838 to 867 nm
AOI Recommended angle of incidence 0 35 Degrees
Maximum absolute transmittance 0° incident angle 87.34% at 863 nm
30° incident angle 81.89% at 855 nm
(1) Relative transmittance is a ratio of transmittance to maximum absolute transmittance at the same angle of incidence.
OPT8241 LVDS_sbas704.gif
1. Dn = bits D0, D2, D4, and so forth. Dn+1 = bits D1, D3, D5, and so forth.
Figure 1. LVDS Switching Diagram
OPT8241 CMOS_sbas704.gif
1. Dn = bits D0, D1, D2, and so forth.
Figure 2. CMOS Switching Diagram

6.9 Typical Characteristics

At VAVDDH = 3.3 V, VAVDD = 1.8 V, VVMIXH = 1.5 V, VDVDD = 1.8 V, VDVDDH = 3.3 V, VPVDD = 3.3 V, VSUB_BIAS = 0 V, and integration duty cycle = 10%, unless otherwise noted.
OPT8241 D010_SBAS704.gif
Normalized to VMIXH = 1.5 V
Figure 3. Normalized VMIXH Supply Current vs
VMIXH Supply Voltage
OPT8241 D012_SBAS704.gif
Figure 5. Optical Filter Transitivity vs
Light Wavelength
OPT8241 D011_SBAS704.gif
Figure 4. VSUB_BIAS Supply Current vs
VSUB_BIAS Supply Voltage
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