ZHCS861B April 2012 – June 2015 PGA450-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Power-supply voltage | VPWR | –0.3 | 40 | V |
Voltage | VREG, VPROG_OTP pin | –0.3 | 10 | V |
LIN | –27 | 40 | V | |
RBIAS, CIN, IN | –0.3 | 3 | V | |
DVDD, XIN, XOUT | –0.3 | 2 | V | |
OUTA, OUTB | –0.3 | 40 | V | |
LIM | –1.5 | 1.5 | V | |
Voltage on all other pins, VMAX | –0.3 | 6 | V | |
Low-side FET current, IFET | 1.5 | A | ||
Maximum operating junction temperature, TJmax | –40 | 150 | ℃ | |
Storage temperature, Tstg | –40 | 125 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
IEC61000-4–2(2) | LIN pin | ±8000 | |||
Charged device model (CDM), per AEC Q100-011 | Corner pins (1, 14, 15, and 28) | ±750 | |||
Other pins | ±500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VPWR | Power-supply voltage | 7 | 18 | V | ||
IPWR | Power-supply current | Power up, TA = 105°C | 50 | mA | ||
Active mode(1) temperature sensor off, TA = 105°C, VPWR = 18 V | 15 | mA | ||||
Quiet mode(1), TA = 105°C, VPWR = 18 V | 7.5 | mA | ||||
IPWRAVG | Average power-supply current(1) | 10 | mA | |||
TA | Operating ambient temperature | –40 | 105 | ℃ | ||
CVREG | Capacitance on VREG pin | 10 | 470 | µF | ||
CVPWR | Capacitance on VPWR pin(2) | 47 | 100 | µF | ||
CESR | ESR of capacitor on VREG pin | 2 | Ω |
THERMAL METRIC(1) | PGA450-Q1 | UNIT | |
---|---|---|---|
PWP (TSSOP) | |||
28 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 68.7 | °C/W |
RθJC | Junction-to-case (top) thermal resistance | 11.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 27.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
POWER SUPPLY | |||||||
VPWRPOR | VPWR voltage for POR to occur | POR is deasserted | 3 | 4.2 | V | ||
VAVDD | AVDD pin voltage | IAVDD = 5 mA | 4.75 | 5 | 5.25 | V | |
IAVDD | AVDD pin load current | 5 | mA | ||||
VDVDD | DVDD pin voltage | 1.8 | V | ||||
VREF | VREF pin voltage | 3 | V | ||||
VREG | |||||||
VREGTOL | Transducer primary voltage tolerance | IREG = 100 µA | VPWR = 7 V VREG_SEL = 0_XXX for 4.7 V–5.4 V |
±100 | mV | ||
VPWR = 10 V VREG_SEL = 1_XXX for 7.7 V–8.4 V |
±150 | ||||||
VREGCHARGE | Transducer voltage droop while charging | IREG = 100 mA, below VREG_SEL setting | 500 | mV | |||
VREGREADY | VREG_READY threshold | Below VREG_SEL setting | 250 | ||||
IVREG | VREG output current | VPWR > VREG_SEL + 2.5 V | 90 | 100 | 110 | mA | |
VPWR > VREG_SEL + 2 V | 100 | µA | |||||
VREGI_S2G | VREG short-to-ground protection current | VPWR = 16 V, TA = 105 °C, no burst | 110 | mA | |||
LOW-SIDE DRIVE MOSFETS | |||||||
rds(on) | FET ON resistance | Iload = 500 mA, TA = 105 °C | 1.2 | Ω | |||
IPULSE | Drain pulse current | 50 kHz | 1.5 | A | |||
Drive clamping voltage | Vgs = 0 V, Idd = 10 mA | 40 | V | ||||
Leakage current | 5 | µA | |||||
LOW NOISE AMPLIFIER | |||||||
AV | Gain | LNA_GAIN setting = 0b00 | 1680 | 1750 | 1820 | V/V | |
LNA_GAIN setting = 0b01 | 892 | 930 | 968 | ||||
LNA_GAIN Setting = 0b10 | 496 | 517 | 538 | ||||
LNA_GAIN Setting = 0b11 | 99 | 104 | 109 | ||||
RIN | Input impedance | 40 kHz | 100 | kΩ | |||
Clamp voltage | –1.5 | 1.5 | V | ||||
ILIM | Input current limit | 200 | mA | ||||
Noise (input-referred of the signal chain) | IN pin = GND, TA = 105 °C, center frequency = 40 kHz, Bandwidth = 10 kHz | 0.7 | µVrms | ||||
Input-referred PSRR | VPWR = 7 V, LNA gain setting = 0b00 | 93 | dB | ||||
12-BIT ADC | |||||||
VADCREF | Input voltage range | 0 | 3 | V | |||
DNL | 20% to 80% input range | 2.5 | LSB | ||||
INL | 20% to 80% input range, best-fit curve | 4 | LSB | ||||
Gain | Best-fit curve | 1373 | 1378 | 1383 | LSB/V | ||
Offset | Best-fit curve | –15 | LSB | ||||
8-BIT DAC | |||||||
VDAC_MAX | Output range | 0.133 | 1.125 | V | |||
Gain | 3.9 | mV/Code | |||||
Offset voltage | Output when DAC code is 000h at Rload = 100 kΩ to GND | 0.133 | V | ||||
Full-scale voltage | Output when DAC code is 0xFF Rload = 100 kΩ to GND | 1.125 | V | ||||
IDAC | Output current | DAC Code = 0x00 DAC Code = 0xFF, Rload = 100 kΩ |
12.5 | µA | |||
INL | –2 | 2 | LSB | ||||
DNL | –1 | 1 | LSB | ||||
Capacitance load | 10 | pF | |||||
TRANSDUCER SATURATION TIME | |||||||
VSAT_TH | Saturation threshold | SAT_SEL = 200 mV | 200 | mV | |||
SAT_SEL = 300 mV | 300 | mV | |||||
SAT_SEL = 400 mV | 400 | mV | |||||
SAT_SEL = 600 mV | 600 | mV | |||||
TEMPERATURE SENSOR | |||||||
Temperature sensor range | –40 | 140 | °C | ||||
Temperature accuracy | –40°C to 105°C | –5 | 5 | °C | |||
Temperature sensor code | 30°C | 0 | LSB | ||||
Temperature sensor LSB | 1.75 | °C/LSB | |||||
GPIOS, 8051 UART Tx AND Rx | |||||||
VIH | GPIO input mode, high, Rx, | Rload > 10 kΩ | 3.5 | 5.3 | V | ||
VIL | GPIO input mode, low, Rx | –0.3 | 1.5 | V | |||
RPULLUP | Internal pullup on input | Pullup is to AVDD | 100 | KΩ | |||
VOH | GPIO strong-mode output, high, Tx | IOH = 5 mA | 4 | V | |||
VOL | GPIO strong-mode output, low, Tx | IOL = 5 mA | 0.8 | V | |||
Total current on GPIO1 + GPIO2 +Tx pin | No load on AVDD pin | 5 | mA | ||||
MEMORY | |||||||
OTP programming voltage | 7.5 | 8 | 8.5 | V | |||
OTP programming current | 2 | 5 | mA | ||||
DIAGNOSTICS | |||||||
VPWR_OV | VPWR overvoltage level | 25 | 28 | 32 | V | ||
AVDD_UV | VPWR for AVDD undervoltage | 5.6 | V | ||||
AVDD_OC | AVDD Overcurrent | 45 | 55 | 65 | mA | ||
RBIAS_OC | RBIAS Overcurrent | 65 | 80 | 90 | µA | ||
Low-side driver A/B drain monitor | 2.2 | 2.5 | 2.8 | V | |||
Low-side driver A/B monitor | 2.2 | 2.5 | 2.8 | V | |||
Over temperature shut-off protection | 150 | 200 | ℃ |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|
IBUS_LIM |
V BUS= 18 V |
40 | 200 | mA | |
IBUS_PAS_dom | Driver off, VBUS= 0V, VPWR= 12 V | –1 | mA | ||
IBUS_PAS_rec | Driver off, 7 V < VPWR < 18 V, 8 V < VBUS < 18 V, VBUS > VPWR | 20 | µA | ||
IBUS_NO_GND | GNDDevice = V PWR, 0 < VBUS < 18 V, VPWR = 12 V | –1 | 1 | mA | |
IBUS_NO_BAT | V PWR= GND, 0 < V BUS < 18 V | 100 | µA | ||
VBUSdom | Receiver dominant state | 0.4 | VPWR | ||
VBUSrec | Receiver recessive state | 0.6 | VPWR | ||
VBUS_CNT | VBUS_CNT = (V th_dom+ V th_rec)/2 | 0.475 | 0.5 | 0.525 | VPWR |
VHYS | VHYS = Vth_rec – Vth_dom | 0.175 | VPWR | ||
RSlave | Serial resistor | 20 | 30 | 60 | KΩ |
CIN | Input capacitance on LIN pin | 60 | pF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
High-level voltage (CS, SCK, SDI, SDO) | 3.5 | V | ||||
Low-level voltage (CS, SCK, SDI, SDO) | 1.5 | V | ||||
CL(SDO) | Capacitive load for data output (SDO) | 10 | pF |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
D1 | THRec(max) = 0.744 × VPWR; THDom(max) = 0.581 × V PWR; V PWR= 7 V...18 V; tBit= 50 µs; D1 = tBus_rec(min)/ (2 × tBit) Load1; CBUS = 1 nF; RBUS = 1KΩ Load2; CBUS = 6.8 nF; RBUS = 660 Ω Load3: CBUS = 10 nF; RBUS = 500 Ω, see Figure 1. |
0.396 | |||
D2 | THRec(min)= 0.522 × VPWR; THDom(min) = 0.284 × VPWR; VPWR= 7.6 V...18 V; tBit = 50 µs; D2 = tBus_rec(max)/ (2 × t Bit) Load1; CBUS = 1 nF; RBUS = 1 kΩ Load2; CBUS = 6.8 nF; R BUS = 660 Ω Load3; C BUS=10 nF; RBUS = 500 Ω, see Figure 1. |
0.581 | |||
D3 | THRec(max) = 0.778 × VPWR; THDom(max) = 0.616 × V PWR; V PWR= 7 V to 18 V; tBit = 96 µs; D4 = tBus_rec(min) / (2 × t Bit) Load1; C BUS = 1 nF; RBUS = 1 kΩ Load2; CBUS = 6.8 nF; RBUS = 660 Ω Load3; CBUS = 10 nF; RBUS = 500 Ω, see Figure 1. |
0.417 | |||
D4 | THRec(min) = 0.389 × VPWR; THDom(min) = 0.251 × VPWR; VPWR = 7.6 V to 18 V; tBit= 96 µs; D4 = tBus_rec(max) / (2 × t Bit) Load1; CBUS = 1 nF; RBUS = 1 kΩ Load2; CBUS = 6.8 nF; RBUS = 660 Ω Load3; CBUS = 10 nF; RBUS = 500 Ω, see Figure 1. |
0.590 | |||
trx_pd | Propagation delay of receiver RRXD = 2.4 kΩ; CRXD = 20 pF |
6 | µs | ||
trx_sym | Symmetry of receiver propagation delay rising edge with respect to falling edge RRXD = 2.4 kΩ; C RXD = 20 pF |
–2 | 2 | µs |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
fSCK | SPI frequency | 8 | MHz | |||
tCSSCK | CS low to first SCK rising edge | See Figure 2. | 125 | ns | ||
tSCKCS | Last SCK rising edge to CS rising edge | 125 | ns | |||
tCSD | CS disable time | 375 | ns | |||
tDS | SDI setup time | 25 | ns | |||
tDH | SDI hold time | 25 | ns | |||
tSDIS | SDI fall/rise time | 25 | ns | |||
tSCKR | SCK rise time | 7 | ns | |||
tSCKF | SCK fall time | 7 | ns | |||
tSCKH | SCK high time | 62.5 | ns | |||
tSCKL | SCK low time | 62.5 | ns | |||
tSDO | SDO enable time | 25 | ns | |||
tACCS | SCK rising edge to SDO data valid | 25 | ns | |||
tSDOD | SDO disable time | 25 | ns | |||
tSDOS | SDO rise/fall time | CSDO = 10 pF, see Figure 2. | 1 | 15 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
12-BIT ADC | ||||||
Conversion time | 1 | µs | ||||
8051W WARP CORE | ||||||
FCORE_CLK | Core frequency | 16 | MHz | |||
Memory interface | 1 | Wait State | ||||
MEMORY | ||||||
OTP programming time | 1 byte | 100 | µs | |||
OTP data retention years | 105 °C | 10 | Years | |||
EEPROM R/W cycles | 1000 | Cycles | ||||
EEPROM data retention | 105 °C | 10 | Years | |||
EEPROM programming time | 32 Bytes | 70 | ms | |||
DIAGNOSTICS | ||||||
Main oscillator underfrequency fault | 14 | MHz | ||||
Main oscillator overfrequency fault | 18 | MHz |
Input referred LNA AC noise in 10-kHz bandwidth around 40 kHz | ||
Vnoise = 0.7 µVrms | ||
BPF center frequency = 58 kHz | BPF bandwidth = 7 kHz | |
BPF center frequency = 58 kHz | BPF bandwidth = 7 kHz | |