ZHCSCT4A September 2014 – January 2017 REF1925 , REF1930 , REF1933 , REF1941
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VIN | –0.3 | 6 | V |
EN | –0.3 | VIN + 0.3 | ||
Temperature | Operating | –55 | 150 | °C |
Junction, TJ | 150 | |||
Storage, Tstg | –65 | 170 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Supply input voltage range (IL = 0 mA, TA = 25°C) | VREF + 0.02(1) | 5.5 | V |
THERMAL METRIC(1) | REF19xx | UNIT | |
---|---|---|---|
DDC (SOT23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 193.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 40.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 34.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 34.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
ACCURACY AND DRIFT | ||||||||
Output voltage accuracy | –0.1% | 0.1% | ||||||
Output voltage temperature coefficient(1) | –40°C ≤ TA ≤ 125°C | ±10 | ±25 | ppm/°C | ||||
VREF and VBIAS tracking over temperature(2) | –40°C ≤ TA ≤ 85°C | ±1.5 | ±6 | ppm/°C | ||||
–40°C ≤ TA ≤ 125°C | ±2 | ±7 | ||||||
LINE AND LOAD REGULATION | ||||||||
ΔVO(ΔVI) | Line regulation | VREF + 0.02 V ≤ VIN ≤ 5.5 V | 3 | 35 | ppm/V | |||
ΔVO(ΔIL) | Load regulation | Sourcing | 0 mA ≤ IL ≤ 20 mA , VREF + 0.6 V ≤ VIN ≤ 5.5 V |
8 | 20 | ppm/mA | ||
Sinking | 0 mA ≤ IL ≤ –20 mA, VREF + 0.02 V ≤ VIN ≤ 5.5 V |
8 | 20 | |||||
POWER SUPPLY | ||||||||
ICC | Supply current | Active mode | 360 | 430 | µA | |||
–40°C ≤ TA ≤ 125°C | 460 | |||||||
Shutdown mode | 3.3 | 5 | ||||||
–40°C ≤ TA ≤ 125°C | 9 | |||||||
Enable voltage | Device in shutdown mode (EN = 0) | 0 | 0.7 | V | ||||
Device in active mode (EN = 1) | VIN – 0.7 | VIN | ||||||
Dropout voltage | 10 | 20 | mV | |||||
IL = 20 mA | 600 | |||||||
ISC | Short-circuit current | 50 | mA | |||||
ton | Turn-on time | 0.1% settling, CL = 1 µF | 500 | µs | ||||
NOISE | ||||||||
Low-frequency noise(3) | 0.1 Hz ≤ f ≤ 10 Hz | 12 | ppmPP | |||||
Output voltage noise density | f = 100 Hz | 0.25 | ppm/√Hz | |||||
CAPACITIVE LOAD | ||||||||
Stable output capacitor range | 0 | 10 | µF | |||||
HYSTERESIS AND LONG-TERM STABILITY | ||||||||
Long-term stability | 0 to 1000 hours | 60 | ppm | |||||
Output voltage hysteresis(4) | 25°C, –40°C, 125°C, 25°C | Cycle 1 | 60 | ppm | ||||
Cycle 2 | 35 |
–40°C ≤ TA ≤ 125°C |
Refer to the Solder Heat Shift section for more information. |
VBIAS output |
VBIAS output | IL = 20 mA |
VBIAS output | IL = –20 mA |
VBIAS output |
CL = 10 µF |
CL = 10 µF |
CL = 10 µF | IL = ±1-mA step |
CL = 10 µF | IL = ±20-mA step |
CL = 1 µF |
VREF output |
VBIAS output |
–40°C ≤ TA ≤ 85°C |
Refer to the Solder Heat Shift section for more information. |
VREF output |
VREF output | IL = 20 mA |
VREF output | IL = –20 mA |
VREF output |
CL = 0 µF |
CL = 1 µF |
CL = 1 µF | IL = ±1-mA step |
CL = 1 µF | IL = ±20-mA step |
CL = 10 µF |
VBIAS output |
VREF output |