SBOS502F September 2009 – December 2016 REF5025-HT
PRODUCTION DATA.
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
DNC | 1, 8 | — | Do not connect |
GND | 4 | Power | System ground |
NC | 7 | — | No internal connection |
TEMP | 3 | O | Temperature monitoring pin provides a temperature-dependent voltage output |
TRIM/NR | 5 | I | Output adjustment and noise reduction input. Connecting 1 μF to this pin creates a low-pass filter at the bandgap and reduce output noise |
VIN | 2 | Power | Power supply voltage. Range from VOUT + 0.2 V up to 18 V. TI recommends a bypass capacitor with a value from 1 μF up to 10 μF |
VOUT | 6 | O | Very accurate, factory-trimmed voltage output. TI recommends a bypass capacitor with a value from 1 μF up to 50 μF with ESR between 1 and 1.5 Ω |
DIE THICKNESS | BACKSIDE FINISH | BACKSIDE POTENTIAL | BOND PAD METALLIZATION COMPOSITION | BOND PAD THICKNESS |
---|---|---|---|---|
15 mils | Silicon with backgrind | GND | Al-Cu (0.5%) | 598 nm |
DESCRIPTION | PAD NUMBER | X MIN | Y MIN | X MAX | Y MAX |
---|---|---|---|---|---|
NC | 1 | 35.45 | 46.55 | 111.45 | 122.55 |
NC | 2 | 496.75 | 56.55 | 572.75 | 132.55 |
VIN | 3 | 607.45 | 56.55 | 683.45 | 132.55 |
NC | 4 | 637.9 | 39.4 | 1013.9 | 115.4 |
TEMP | 5 | 1660.1 | 47.2 | 1736.1 | 123.2 |
GND | 6 | 1770.9 | 38.85 | 1847.05 | 115 |
GND | 7 | 1877.1 | 59.6 | 2016.8 | 135.6 |
TRIM/NR | 8 | 1904.65 | 1553.4 | 1980.65 | 1629.4 |
NC | 9 | 1782.15 | 1553.4 | 1858.15 | 1629.4 |
VOUT | 10 | 1080.2 | 1559.85 | 1219.9 | 1636 |
VOUT | 11 | 880.25 | 1543.55 | 956.25 | 1619.55 |
NC | 12 | 35.45 | 1553.45 | 111.45 | 1629.45 |