ZHCSD28C November 2012 – December 2014 RF430FRL152H , RF430FRL153H , RF430FRL154H
PRODUCTION DATA.
Table 7-1 lists the bill of materials for this application.
Name | Value | Description |
---|---|---|
L1 | 3 µH | RF inductance (nominal) |
C1 | 8.2 pF | RF tuning capacitor (nominal) |
C2 | 2.2 µF | Decoupling cap at VDDSW |
C3 | 100 nF | Decoupling cap at VDDB |
C4 | 10 nF | Charge pump capacitor |
C5 | 100 nF | Decoupling cap at VDD2X |
C6 | 10 nF | Decoupling cap at RST |
C7 | 1µF | Bypass capacitor between SVSS and VSS |
C8 | 100 nF | Decoupling cap at VDD |
C9 | 100 nF | Decoupling cap at VDDH |
B1 | 1.5 V | Battery |
R2 | 100 kΩ | Reference resistor |