ZHCSK05D July 2019 – October 2022 SN3257-Q1
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Parameter Measurement Information
- 7.1 On-Resistance
- 7.2 Off-Leakage Current
- 7.3 On-Leakage Current
- 7.4 IPOFF Leakage Current
- 7.5 Transition Time
- 7.6 tON (EN) and tOFF (EN) Time
- 7.7 tON (VDD) and tOFF (VDD) Time
- 7.8 Break-Before-Make Delay
- 7.9 Propagation Delay
- 7.10 Skew
- 7.11 Charge Injection
- 7.12 Capacitance
- 7.13 Off Isolation
- 7.14 Channel-to-Channel Crosstalk
- 7.15 Bandwidth
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
7.11 Charge Injection
The amount of charge injected into the source or drain of the device during the falling or rising edge of the gate signal is known as charge injection, and is denoted by the symbol QC. Figure 7-11 shows the setup used to measure charge injection from source (Sx) to drain (Dx).
Figure 7-11 Charge-Injection Measurement Setup