ZHCSQH0F December   1982  – April 2022 SN54HC273 , SN74HC273

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings – SN74HC273
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Electrical Characteristics – SN54HC273
    7. 6.7  Electrical Characteristics – SN74HC273
    8. 6.8  Timing Requirements
    9. 6.9  Timing Requirements – SN54HC273
    10. 6.10 Timing Requirements – SN74HC273
    11. 6.11 Switching Characteristics
    12. 6.12 Switching Characteristics – SN54HC273
    13. 6.13 Switching Characteristics – SN74HC273
    14. 6.14 Operating Characteristics
    15. 6.15 Typical Characteristics
  7. 7 Parameter Measurement Information
    1.     23
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • W|20
  • J|20
  • FK|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.3 Feature Description

The SNx4HC273 has low power consumption with a maximumCC of 80 µA.

The typical tpd for the SNx4HC273 is 12 ns and the output drive is ±4 mA at 5 V.

The SNx4HC273 also has very low input current, with the maximum set at 1 µA.
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