ZHCSRU7E november   2002  – march 2023 SN65HVD08 , SN75HVD08

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Driver Switching Characteristics
    7. 6.7 Receiver Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Supply Source Impedance
      2. 9.1.2 Opto-Isolated Data Buses
      3. 9.1.3 Opto Alternative
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
          1.        30
          2.        31
        3. 9.2.1.3 Bus Loading
        4. 9.2.1.4 Receiver Failsafe
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Feature Description

Internal ESD protection circuits protect the transceiver bus terminals against ±16 kV Human Body Model (HBM) electrostatic discharges and all other pins up to ±4 kV.

The SNx5HVD08 provides internal biasing of the receiver input thresholds for open-circuit, bus-idle, or short-circuit failsafe conditions, and a typical receiver hysteresis of 35 mV.