米6体育平台手机版

ZHCSRD4I July 2003 – January 2023 SN65HVD1176 , SN75HVD1176

PRODUCTION DATA

6.7 Power Dissipation

over recommended operating conditions (unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP⁽¹⁾	MAX	UNIT
P_D	Device power dissipation		R_L = 54 Ω, C_L = 50 pF, 0 V to 3 V, 15 MHz, 50% duty cycle square wave input, driver and receiver enabled		277	318	mW
T_A	Ambient air temperature	SN65HVD1176	Low-K board, no air flow, P_D = 318 mW	–40		64	°C
		SN65HVD1176	High-K board, no air flow, P_D = 318 mW	–40		89	°C
		SN75HVD1176	Low-K board, no air flow, P_D = 318 mW	0			°C
		SN75HVD1176	High-K board, no air flow, P_D = 318 mW	0			°C
T_SD	Thermal shut down junction temperature				150		°C

(1) All typical values are with V_CC = 5 V and T_A = 25°C.