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ZHCSPC1P February 2002 – February 2022 SN65HVD10 , SN65HVD11 , SN65HVD12 , SN75HVD10 , SN75HVD11 , SN75HVD12

PRODUCTION DATA

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机械数据 (封装 | 引脚)

D|8
- MSOI002K
P|8
- MPDI001B

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.8 Driver Switching Characteristics

Over recommended operating conditions unless otherwise noted

PARAMETER			TEST CONDITIONS	MIN	TYP⁽¹⁾	MAX	UNIT
t_PLH	Propagation delay time, low-to-high-level output	HVD10	R_L = 54 Ω, C_L = 50 pF See Figure 8-4	5	8.5	16	ns
		HVD11		18	25	40
		HVD12		135	200	300
t_PHL	Propagation delay time, high-to-low-level output	HVD10		5	8.5	16	ns
		HVD11		18	25	40
		HVD12		135	200	300
t_r	Differential output signal rise time	HVD10		3	4.5	10	ns
		HVD11		10	20	30
		HVD12		100	170	300
t_f	Differential output signal fall time	HVD10		3	4.5	10	ns
		HVD11		10	20	30
		HVD12		100	170	300
t_sk(p)	Pulse skew (\|t_PHL – t_PLH\|)	HVD10				1.5	ns
		HVD11				2.5
		HVD12				7
t_sk(pp)⁽²⁾	Part-to-part skew	HVD10				6	ns
		HVD11				11
		HVD12				100
t_PZH	Propagation delay time, high-impedance-to-high-level output	HVD10	R_L = 110 Ω, RE at 0 V See Figure 8-5			31	ns
		HVD11				55
		HVD12				300
t_PHZ	Propagation delay time, high-level-to-high-impedance output	HVD10				25	ns
		HVD11				55
		HVD12				300
t_PZL	Propagation delay time, high-impedance-to-low-level output	HVD10	R_L = 110 Ω, RE at 0 V See Figure 8-6			26	ns
		HVD11				55
		HVD12				300
t_PLZ	Propagation delay time, low-level-to-high-impedance output	HVD10				26	ns
		HVD11				75
		HVD12				400
t_PZH	Propagation delay time, standby-to-high-level output		R_L = 110 Ω, RE at 3 V See Figure 8-5			6	μs
t_PZL	Propagation delay time, standby-to-low-level output		R_L = 110 Ω, RE at 3 V See Figure 8-6			6	μs

(1) All typical values are at 25°C and with a 3.3-V supply.

(2) t_sk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.