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ZHCSPC1P February 2002 – February 2022 SN65HVD10 , SN65HVD11 , SN65HVD12 , SN75HVD10 , SN75HVD11 , SN75HVD12

PRODUCTION DATA

7.7 Power Dissipation Characteristics

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
P_D	Device power dissipation	R_L= 60 Ω, C_L = 50 pF, DE at V_CC, RE at 0 V, Input to D is a 50% duty-cycle square wave at indicated signaling rate	HVD10 (32Mbps)		198	250	mW
			HVD11 (10Mbps)		141	176
			HVD12 (500 kbps)		133	161
T_A	Ambient air temperature⁽¹⁾	High-K board, no airflow	D pkg	–40		116	°C
T_A	Ambient air temperature⁽¹⁾	No airflow⁽²⁾	P pkg	–40		123	°C
T_JSD	Thermal shutdown junction temperature⁽¹⁾				165		°C

(1) See Section 12.3.1 section for an explanation of these parameters.

(2) JESD51−10, Test Boards for Through-Hole Perimeter Leaded Package Thermal Measurements.