SLLS933G November   2008  – January 2015 SN65HVD233-HT

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (Continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Driver Electrical Characteristics
    6. 7.6  Receiver Electrical Characteristics
    7. 7.7  Driver Switching Characteristics
    8. 7.8  Receiver Switching Characteristics
    9. 7.9  Device Switching Characteristics
    10. 7.10 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 ISO 11898 Compliance of SN65HVD23x Family of 3.3-V CAN Transceivers
        1. 9.3.1.1 Differential Signal
          1. 9.3.1.1.1 Common-Mode Signal
        2. 9.3.1.2 Interoperability Of 3.3-V CAN in 5-V CAN Systems
    4. 9.4 Device Functional Modes
      1. 9.4.1 Function Tables
      2. 9.4.2 Equivalent Input and Output Schematic Diagrams
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Diagnostic Loopback
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slope Control
        2. 10.2.2.2 Standby
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

13 Device and Documentation Support

13.1 Trademarks

DeviceNet is a trademark of Open DeviceNet Vendor Association.

SDS is a trademark of TI.

All other trademarks are the property of their respective owners.

13.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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