米6体育平台手机版

ZHCSRU4F November 2006 – March 2023 SN65HVD3080E , SN65HVD3083E , SN65HVD3086E

PRODUCTION DATA

5.8 Driver Switching Characteristics

over recommended operating conditions unless otherwise noted

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time, low-to-high-level output Propagation delay time, high-to-low-level output	HVD3080E	R_L = 54 Ω, C_L = 50 pF, See Figure 6-4		0.7	1.3	μs
		HVD3083E			150	500	ns
		HVD3086E			12	20	ns
t_r, t_f	Differential output signal rise time Differential output signal fall time	HVD3080E		0.5	0.9	1.5	μs
		HVD3083E			200	300	ns
		HVD3086E			7	15	ns
t_sk(p)	Pulse skew (\|t_PHL – t_PLH\|)	HVD3080E			20	200	ns
		HVD3083E			5	50	ns
		HVD3086E			1.4	5	ns
t_PZH	Propagation delay time, high-impedance-to-high-level output	HVD3080E	R_L = 110 Ω, RE at 0 V, See Figure 6-5		2.5	7	μs
		HVD3083E			1	2.5	μs
		HVD3086E			13	30	ns
t_PHZ	Propagation delay time, high-level-to-high-impedance output	HVD3080E			80	200	ns
		HVD3083E			60	100	ns
		HVD3086E			12	30	ns
t_PZL	Propagation delay time, high-impedance-to-low-level output	HVD3080E	R_L = 110 Ω, RE at 0 V, See Figure 6-6		2.5	7	μs
		HVD3083E			1	2.5	μs
		HVD3086E			13	30	ns
t_PLZ	Propagation delay time, low-level-to-high-impedance output	HVD3080E			80	200	ns
		HVD3083E			60	100	ns
		HVD3086E			12	30	ns
t_PZH,	Propagation delay time, standby-to-high-level output (See Figure 6-5)		R_L = 110 Ω, RE at 3 V		3.5	7	μs
t_PZL	Propagation delay time, standby-to-low-level output (See Figure 6-6)		R_L = 110 Ω, RE at 3 V		3.5	7	μs