ZHCS603D November 2011 – April 2022 SN65HVDA100-Q1
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 说明（续）
- 5 Revision History
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Parameter Measurement Information
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 LIN (Local Interconnect Network) Bus
- 9.3.2 TXD (Transmit Input / Output)
- 9.3.3 RXD (Receive Output)
- 9.3.4 VSUP (Supply Voltage)
- 9.3.5 GND (Ground)
- 9.3.6 EN (Enable Input)
- 9.3.7 NWake (High Voltage Wake Up Input)
- 9.3.8 INH (Inhibit Output)
- 9.3.9 TXD Dominant State Timeout
- 9.3.10 Thermal Shutdown
- 9.3.11 Bus Stuck Dominant System Fault: False Wake-Up Lockout
- 9.3.12 Undervoltage on VSUP
- 9.3.13 Unpowered Device Does Not Affect the LIN Bus
- 9.4 Device Functional Modes
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
13.5 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |