ZHCSQ22C July   2009  – June 2022 SN65HVDA195-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Local Interconnect Network (LIN) Bus
        1. 9.3.1.1 Transmitter Characteristics
        2. 9.3.1.2 Receiver Characteristics
      2. 9.3.2 Transmit Input (TXD)
      3. 9.3.3 Receive Output (RXD)
        1. 9.3.3.1 RXD Wake-Up Request
      4. 9.3.4 Supply Voltage (VSUP)
      5. 9.3.5 Ground (GND)
      6. 9.3.6 Enable Input (EN)
      7. 9.3.7 NWake Input (NWake)
      8. 9.3.8 Inhibit Output (INH)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operating Modes
      2. 9.4.2 Normal Mode
      3. 9.4.3 Sleep Mode
      4. 9.4.4 Wake-Up Events
      5. 9.4.5 Standby Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Typical Application
        1. 10.1.1.1 Design Requirements
        2. 10.1.1.2 Detailed Design Procedure
        3. 10.1.1.3 Application Curves
      2.      Power Supply Recommendations
      3. 10.1.2 Layout
        1. 10.1.2.1 Layout Guidelines
        2. 10.1.2.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.