ZHCSBQ4B September   2013  – September 2014 SN65LVDS822

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明（继续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 DC Electrical Characteristics
    6. 7.6 Power Supply Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Test Patterns
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Unused LVDS Data Lanes
      2. 9.3.2 Tying CMOS Inputs With Resistors
    4. 9.4 Device Functional Modes
      1. 9.4.1 Active Modes
        1. 9.4.1.1 4-Lanes 7-Bit Mode
        2. 9.4.1.2 2-Lanes 14-Bit Mode
      2. 9.4.2 Low-Power Modes
        1. 9.4.2.1 Standby Mode
        2. 9.4.2.2 Shutdown Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Color Bit Mapping
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Power Supply
        2. 10.2.2.2 CMOS Output Bus Connector
        3. 10.2.2.3 Power-Up Sequence
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
    1. 11.1 Decoupling Capacitor Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 商标
    2. 13.2 静电放电警告
    3. 13.3 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Supply voltage range(2), VDD , VDDIO –0.3 4 V
Voltage range at any input terminal When VDDIO > 0 V –0.5 4 V
Voltage range at any output terminal When VDDIO ≤ 0 V –0.5 VDDIO + 0.7
Maximum junction temperature, TJ 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the GND terminals

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model(1) (all pins) –3 3 V
Charged device model(2) (all pins) –1.5 1.5
(1) In accordance with JEDEC Standard 22, Test Method A114-B
(2) In accordance with JEDEC Standard 22, Test Method C101

7.3 Recommended Operating Conditions

TEST CONDITIONS MIN TYP MAX UNIT
VDD Main power supply 3 3.3 3.6 V
VDDIO Power supply for CMOS outputs 1.65 3.6 V
VNOISE Power supply noise
(peak-to-peak)		 fNOISE < 1 MHz 100 mV
fNOISE > 1 MHz 50
TA Operating free-air temperature –40 85 °C
TC Case temperature 98 °C
LVDS CLOCK (CLKP, CLKN)
fCLK LVDS clock frequency MODE14 = Low 4 54 MHz
MODE14 = High 4 27
Standby Mode 0.5
tDC LVDS clock duty cycle MODE14 = Low 57%
MODE14 = High 50%
LVDS INPUTS (A0P, A0N, A1P, A1N, A2P, A2N, A3P, A3N, CLKP, CLKN)
|VID| Input differential voltage(1) |VAxP – VAxN| and |VCLKP-VCLKN| 90 600 mV
ΔVID Input differential voltage variation between lanes –10% 10%
VCM Input common mode voltage(1) |VID|/2 2.4 - |VID|/2 V
ΔVCM Input common mode voltage variation between lanes –100 100 mV
tR/F(VID) LVDS VID rise/fall time(2) MODE14 = Low fCLK = 4 MHz to 14 MHz 3 ns
fCLK = 14 MHz to 22 MHz 2
fCLK = 22 MHz to 30 MHz 1.5
fCLK = 30 MHz to 54 MHz 1
MODE14 = High fCLK = 4 MHz to 7 MHz 3
fCLK = 7 MHz to 11 MHz 2
fCLK = 11 MHz to 15 MHz 1.5
fCLK = 15 MHz to 27 MHz 1
CMOS OUTPUTS (D[26:0], CLKOUT)
CL Capacitive load on the outputs 10 pF
(1) See Figure 1.
(2) See Figure 6. Defined from 20% to 80% of the differential voltage transition. Faster edge rates are generally preferred, as they provide more timing margin.

7.4 Thermal Information

THERMAL METRIC(1) SN65LVDS822 UNIT
RGZ
48 PINS
θJA Junction-to-ambient thermal resistance(2) 30.1 °C/W
θJCtop Junction-to-case (top) thermal resistance(3) 18.1
θJB Junction-to-board thermal resistance(4) 6.9
ψJT Junction-to-top characterization parameter(5) 0.2
ψJB Junction-to-board characterization parameter(6) 6.9
θJCbot Junction-to-case (bottom) thermal resistance(7) 0.7
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

7.5 DC Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
LVDS INPUTS (A0P, A0N, A1P, A1N, A2P, A2N, A3P, A3N, CLKP, CLKN)
RID Differential input termination resistance(1) SWAP = Low or High 80 132 Ω
CID Differential input capacitance Measured across differential pairs 1 pF
RPU Pull-up resistor for standby detection Measured from each input to VDD 90 kΩ
|II| Input leakage current VDD = 3.6 V; RID disconnected; One P/N terminal is swept from 0 V to 2.4 V while the other is 1.2 V 70 µA
CMOS INPUTS (SWAP, MODE14, CLKPOL, SHTDN#, SLEW)
CIN Input capacitance for CMOS inputs 2 pF
VIK Input clamp voltage II = -18 mA –1.2 V
VIH High-level input voltage 0.8 x VDD V
VIL Low-level input voltage 0.2 x VDD V
3-STATE CMOS INPUTS (SWAP, CLKPOL, SLEW)
VF Floating voltage VIN = High impedance VDD/2 V
IIH High-level input current (through pull-down) VIN = 3.6 V 36 µA
IIL Low-level input current (through pull-up) VIN = GND, VDD = 3.6 V -36 µA
2-STATE CMOS INPUTS (MODE14, SHTDN#)
IIH High-level input current (through pull-down) VIN = 3.6 V 20 µA
IIL Low-level input current VIN = GND 0 µA
CMOS OUTPUTS (D[26:0], CLKOUT)
VOH High-level output voltage SLEW = Low; IOH = -250 µA 0.8 x VDDIO VDDIO V
SLEW = Floating; IOH = -500 µA 0.8 x VDDIO VDDIO
SLEW = High; IOH = -1.33 mA 0.8 x VDDIO VDDIO
VOL Low-level output voltage SLEW = Low; IOL = 250 µA 0 0.5 V
SLEW = Floating; IOL = 500 µA 0 0.5
SLEW = High; IOL = 1.33 mA 0 0.5
(1) When VDD = 0 V, the connection of RID is unknown.

7.6 Power Supply Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS(1)(2) TYP MAX(1) UNIT
IDD Total average supply current of VDD and VDDIO Grayscale pattern; outputs terminated with 10 pF; MODE14 = Low, VDD = 3.3 V, VDDIO = 1.8 V SLEW = Low; fCLK = 10 MHz 24.6 mA
Grayscale pattern; outputs terminated with 10pF; MODE14 = Low, VDD = VDDIO = 3.3 V SLEW = Low; fCLK = 10 MHz 25.7 mA
SLEW = Float; fCLK = 20 MHz 30.9
SLEW = High; fCLK = 54 MHz 51.5
1010 pattern; outputs terminated with 10 pF; MODE14 = Low, VDD = VDDIO = 3.6 V SLEW = Float; fCLK = 20 MHz 48.2 59 mA
SLEW = High; fCLK = 54 MHz 101.7 124
Standby Mode LVDS inputs are open; CMOS inputs held static; Outputs terminated with 10 pF fCLK < 500 kHz;
VCM-CLKP/N ≤ 0.80 x VDD		 4 7 mA
VCM-CLKP/N > 0.95 x VDD 75 130 µA
Shutdown Mode SHTDN# = Low 4 20
PD Power Dissipation Grayscale pattern; outputs terminated with 10 pF; MODE14 = Low, VDD = 3.3 V, VDDIO = 1.8 V SLEW = Low; fCLK = 10 MHz 83 mW
1010 pattern; outputs terminated with 10 pF; MODE14 = Low, VDD = VDDIO = 3.6 V SLEW = High; fCLK = 54 MHz 366 446
(1) Grayscale and 1010 test patterns are described by Figure 5 to Figure 6 and Table 1 to Table 2.
(2) Standby Mode can be entered in two ways: fCLK = zero to 500 kHz, or a high VCM on the LVDS clock. If the LVDS transmitter device disables its clock driver to a high-impedance state, the SN65LVDS822’s integrated RPU will pull VCM high for the lower-power Standby state.

7.7 Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
INPUT TO OUTPUT RESPONSE TIME
tPD Propagation delay of data Measured from CLK input to CLKOUT 2.4/fCLK s
tPWRUP Enable time, exiting Shutdown From Shutdown Mode, time from SHTDN# pulled High to valid output data (see Figure 9) 2 ms
tWAKE Enable time, exiting Standby From Standby Mode, time from when CLK input starts switching to valid output data 2 ms
tPWRDN Disable time, entering Shutdown From Active Mode, time from SHTDN# pulled Low until all outputs are static-Low 11 µs
tSTANDBY Disable time, entering Standby From Active Mode, time from CLK input stopping until all outputs are static-Low 3 µs
fBW PLL bandwidth(1) Tested from CLK input to CLKOUT 6% x fCLK Hz
LVDS INPUTS (A0P, A0N, A1P, A1N, A2P, A2N, A3P, A3N, CLKP, CLKN)
tRSKM Receiver input skew margin(2)(3)(4) tR/F(VID) = 600 ps
VID = 90 mV
See Figure 2		 MODE14 = Low 1/(14 x fCLK) – 620E-12 s
MODE14 = High 1/(28 x fCLK) – 620E-12
tSU1 LVDS data setup time required before internal clock edge 620 ps
tH1 LVDS data hold time required after internal clock edge 620 ps
CMOS OUTPUTS (D[26:0], CLKOUT)
tDCYC Duty cycle of CLKOUT MODE14 = Low CLKPOL = Low 43%
CLKPOL = High 57%
MODE14 = High 50%
tR/F CMOS output rise and fall time (20% to 80%) CL = 10 pF SLEW = Low 10 15 20 ns
SLEW = Floating 5 7.5 10
SLEW = High 1.3 2.1 3
tSU2 Setup time available for the downstream receiver(5) MODE14 = Low; CL = 10 pF SLEW = Low 0.38/fCLK – 2.2E-9 s
SLEW = Floating 0.38/fCLK – 1.2E-9
SLEW = High 0.38/fCLK – 0.7E-9
MODE14 = High; CL = 10 pF SLEW = Low 0.45/fCLK – 2.5E-9
SLEW = Floating 0.45/fCLK – 1.5E-9
SLEW = High 0.45/fCLK – 1E-9
tH2 Hold time available for the downstream receiver(5) MODE14 = Low; CL = 10 pF SLEW = Low 0.52/fCLK – 18.2E-9 s
SLEW = Floating 0.52/fCLK – 9.2E-9
SLEW = High 0.52/fCLK – 3.7E-9
MODE14 = High; CL = 10 pF SLEW = Low 0.45/fCLK – 18.5E-9
SLEW = Floating 0.45/fCLK – 9.5E-9
SLEW = High 0.45/fCLK – 4E-9
(1) The PLL bandwidth describes the typical highest modulation frequency that can be tracked. If the LVDS transmitter device generates a spread spectrum, the LVDS clock and data must stay synchronized throughout modulation. The SN65LVDS822 will track and pass through modulation, and the downstream CMOS receiver must be able to track it.
(2) Receiver Input Skew Margin (tRSKM) is the timing margin available for transmitter output pulse position (tPPOS), interconnect skew, and interconnect inter-symbol interference. tRSKM represents the reminder of the serial bit time not taken up by the receiver strobe uncertainty. The tRSKM assumes a bit error rate better than 10-12.
(3) tRSKM is indirectly proportional to: internal setup and hold time uncertainty, ISI, duty cycle distortion from the front end receiver, skew mismatch between LVDS clock and data, and PLL cycle-to-cycle jitter.
(4) LVDS input timing defined here is based on a simulated statistical analysis across process, voltage, and temperature ranges.
(5) See Figure 3 and Figure 4.
flatlink_input_voltage_def_llsee8.gifFigure 1. FlatLink™ Input Voltage Definitions
lvds_input_timing_llsee8.gifFigure 2. LVDS Input Timing (MODE14 = Low)
cmos_output_timing_low_llsee8.gifFigure 3. CMOS Output Timing (CLKPOL = Low)
cmos_output_timing_high_llsee8.gifFigure 4. CMOS Output Timing (CLKPOL = High)
exit_shtdwn_mode_llsee8.gifFigure 5. Time to Exit Shutdown Mode
lvds_rise_fall_time_llsee8.gifFigure 6. LVDS Rise/Fall Time (Differential Voltage)

7.8 Typical Characteristics

output_range_sllsee8.gif
space
Figure 7. Output Rise & Fall times - SLEW = High
output_delay_sllsee8.gif
Input: channel 2 (green), Output: channel 1 (yellow)
Figure 8. Total Output Delay
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