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SCAS755B December 2003 – June 2014 SN74LVC16373A

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DGG|48
DL|48
DGV|48

散热焊盘机械数据 (封装 | 引脚)

订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage range		–0.5	6.5	V
V_I	Input voltage range⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high-impedance or power-off state⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high or low state⁽²⁾⁽³⁾		–0.5	V_CC + 0.5	V
I_IK	Input clamp current	V_I < 0		–50	mA
I_OK	Output clamp current	V_O < 0		–50	mA
I_O	Continuous output current			±50	mA
	Continuous current through each V_CC or GND			±100	mA

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3) The value of V_CC is provided in the Recommended Operating Conditions table.

7.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	0	2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	0	1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage	Operating	1.65	3.6	V
V_CC	Supply voltage	Data retention only	1.5		V
V_IH	High-level input voltage	V_CC = 1.65 V to 1.95 V	0.65 × V_CC		V
		V_CC = 2.3 V to 2.7 V	1.7
		V_CC = 2.7 V to 3.6 V	2
V_IL	Low-level input voltage	V_CC = 1.65 V to 1.95 V		0.35 × V_CC	V
		V_CC = 2.3 V to 2.7 V		0.7
		V_CC = 2.7 V to 3.6 V		0.8
V_I	Input voltage		0	5.5	V
V_O	Output voltage	High or low state	0	V_CC	V
V_O	Output voltage	High-impedance state	0	5.5	V
I_OH	High-level output current	V_CC = 1.65 V		–4	mA
		V_CC = 2.3 V		–8
		V_CC = 2.7 V		–12
		V_CC = 3 V		–24
I_OL	Low-level output current	V_CC = 1.65 V		4	mA
		V_CC = 2.3 V		8
		V_CC = 2.7 V		12
		V_CC = 3 V		24
Δt/Δv	Input transition rise and fall rate			10	ns/V
T_A	Operating free-air temperature		–40	125	°C

(1) All unused inputs of the device must be held at V_CCor GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		DL	UNIT
THERMAL METRIC⁽¹⁾		48 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	68.4	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	34.7
R_θJB	Junction-to-board thermal resistance	41.0
ψ_JT	Junction-to-top characterization parameter	12.3
ψ_JB	Junction-to-board characterization parameter	40.4
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER	TEST CONDITIONS		V_CC	MIN	TYP⁽¹⁾	MAX	UNIT
V_OH	I_OH = –100 μA		1.65 V to 3.6 V	V_CC – 0.2			V
	I_OH = –4 mA		1.65 V	1.2
	I_OH = –8 mA		2.3 V	1.7
	I_OH = –12 mA		2.7 V	2.2
	I_OH = –12 mA		3 V	2.4
	I_OH = –24 mA		3 V	2.2
V_OL	I_OL = 100 μA		1.65 V to 3.6 V			0.2	V
	I_OL = 4 mA		1.65 V			0.45
	I_OL = 8 mA		2.3 V			0.7
	I_OL = 12 mA		2.7 V			0.4
	I_OL = 24 mA		3 V			0.55
I_I	V_I = 0 to 5.5 V		3.6 V			±5	μA
I_off	V_I or V_O = 5.5 V		0			±10	μA
I_OZ	V_O = 0 to 5.5 V		3.6 V			±10	μA
I_CC	V_I = V_CC or GND	I_O = 0	3.6 V			20	μA
I_CC	3.6 V ≤ V_I ≤ 5.5 V⁽²⁾	I_O = 0	3.6 V			20	μA
ΔI_CC	One input at V_CC – 0.6 V, Other inputs at V_CC or GND		2.7 V to 3.6 V			500	μA
C_i	V_I = V_CC or GND		3.3 V		5		pF
C_o	V_O = V_CC or GND		3.3 V		6.5		pF

(1) All typical values are at V_CC = 3.3 V, T_A = 25°C.

(2) This applies in the disabled state only.

7.6 Timing Requirements

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

		V_CC= 1.8 V ± 0.15 V		V_CC= 2.5 V ± 0.2 V		V_CC = 2.7 V		V_CC= 3.3 V ± 0.3 V		UNIT
		MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX	UNIT
t_w	Pulse duration, LE high	3.3		3.3		3.3		3.3		ns
t_su	Setup time, data before LE↓	1.6		1.2		1.7		1.7		ns
t_h	Hold time, data after LE↓	1		1.1		1.2		1.2		ns

7.7 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 2.7 V		V_CC = 3.3 V ± 0.3 V		UNIT
PARAMETER	FROM (INPUT)	TO (OUTPUT)	MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX	UNIT
t_pd	D	Q	1.5	6.4	1	4.2	1	4.9	1.6	4.2	ns
t_pd	LE	Q	1.5	7.1	1	4.8	1	5.3	2.1	4.6	ns
t_en	OE	Q	1.5	6.7	1	4.7	1	5.7	1.3	4.7	ns
t_dis	OE	Q	1.5	8.4	1	5	1	6.3	2.5	5.9	ns

7.8 Operating Characteristics

T_A= 25°C

PARAMETER			TEST CONDITIONS	V_CC = 1.8 V	V_CC = 2.5 V	V_CC = 3.3 V	UNIT
PARAMETER			TEST CONDITIONS	TYP	TYP	TYP	UNIT
C_pd	Power dissipation capacitance per latch	Outputs enabled	f = 10 MHz	32	35	39	pF
C_pd	Power dissipation capacitance per latch	Outputs disabled	f = 10 MHz	4	4	6	pF

7.9 Typical Characteristics

Figure 1. SN74LVC16373A
LE to Q Across Temperature 3.3-V V_CC

Figure 2. SN74LVC16373A LE to Q TDP
V_CC vs TPD at 25°C