SCES636B AUGUST   2005  – April 2015 SN74LVC16T245

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Switching Characteristics: VCCA = 1.8 V ±0.15 V
    7. 7.7  Switching Characteristics: VCCA = 2.5 V ±0.2 V
    8. 7.8  Switching Characteristics: VCCA = 3.3 V ±0.3 V
    9. 7.9  Switching Characteristics: VCCA = 5 V ±0.5 V
    10. 7.10 Operating Characteristics
    11. 7.11 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fully Configurable Dual-Rail Design Allows Each Port to Operate Over the Full 1.65-V to 5.5-V Power-Supply Range
      2. 9.3.2 Support High-Speed Translation
      3. 9.3.3 Partial-Power-Down Mode Operation
      4. 9.3.4 VCC Isolation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Enable Times
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DGG|48
  • DL|48
  • DGV|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

13 Device and Documentation Support

13.1 Documentation Support

13.1.1 Related Documentation

For related documentation see the following:

  • CMOS Power Consumption and Cpd Calculation, SCAA035
  • Implications of Slow or Floating CMOS Inputs, SCBA004

13.2 Trademarks

All other trademarks are the property of their respective owners.

13.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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