SCES295Z June   2000  – November 2017 SN74LVC1G06

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristifcs
    6. 6.6 Switching Characteristics: -40°C to +85°C
    7. 6.7 Switching Characteristics: -40°C to +125°C
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 CMOS Open-Drain Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Negative Clamping Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • YZV|4
  • DRL|5
  • YZP|5
  • DRY|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 6.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
Tj Junction temperature –65 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 1000
Machine Model (MM), per A115-A 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 × VCC
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 × VCC
VI Input voltage 0 5.5 V
VO Output voltage 0 5.5 V
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
Δt/Δv Input transition rise or fall rate VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 ns/V
VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5
TA Operating free-air temperature –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs application report.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC1G06 UNIT
DBV
(SOT-23)		 DCK
(SC70)		 DRL
(SOT-5X3)		 DRY
(SON)		 DPW
(X2SON)		 YZV
(DSBGA)		 YZP
(DSBGA)
5 PINS 5 PINS 5 PINS 5 PINS 5 PINS 4 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 231.5 276.1 296.2 369.6 511 168.2 144.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 139.4 178.9 137.3 257.6 241.9 2.1 1.3 °C/W
RθJB Junction-to-board thermal resistance 71.1 70.9 145.3 230.8 374.2 55.9 39.9 °C/W
ψJT Junction-to-top characterization parameter 45.2 47 14.7 77.2 45 1.1 0.5 °C/W
ψJB Junction-to-board characterization parameter 70.7 69.3 145.9 231 373.3 56.3 39.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A N/A 168 N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metricsapplication report.

6.5 Electrical Characteristifcs

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
VOL High-level output voltage IOL = 100 μA 1.65 V to 5.5 V 0.1 V
IOL = 4 mA 1.65 V 0.45
IOL = 8 mA 2.3 V 0.3
IOL = 16 mA 3 V 0.4
IOL = 24 mA 0.55
IOL = 32 mA 4.5 V 0.55
II Inflection-point current VI = 5.5 V or GND A input 0 to 5.5 V ±1 µA
Ioff Off-state current VI or VO = 5.5 V 0 ±10 µA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 µA
ΔICC One input at VCC  – 0.6 V,
Other inputs at VCC or GND		 3 V to 5.5 V 500 µA
CI Input capacitance VI = VCC or GND 3.3 V 4 pF
CO Off-state capacitance VO = VCC or GND 3.3 V 5 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics: –40°C to +85°C

over recommended operating free-air temperature range, TA = –40°C to +85°C (unless otherwise noted) (see Figure 3)
PARAMETER FROM (INPUT) TO (OUTPUT) VCC MIN MAX UNIT
tpd Propagation delay A Y 1.8 V ± 0.15 V 2.2 6.5 ns
2.5 V ± 0.2 V 1.1 4
3.3 V ± 0.3 V 1.2 4
5 V ± 0.5 V 1 3

6.7 Switching Characteristics: –40°C to +125°C

over recommended operating free-air temperature range, TA = –40°C to +125°C (unless otherwise noted) (see Figure 3)
PARAMETER FROM (INPUT) TO (OUTPUT) VCC MIN MAX UNIT
tpd Propagation delay A Y 1.8 V ± 0.15 V 2.2 7 ns
2.5 V ± 0.2 V 1.1 4.5
3.3 V ± 0.3 V 1.2 4.5
5 V ± 0.5 V 1 3.5

6.8 Operating Characteristics

TA = 25°C
PARAMETER TEST CONDITIONS VCC TYP UNIT
Cpd Power dissipation capacitance f = 10 MHz 1.8 V 3 pF
2.5 V 3
3.3 V 4
5 V 6

6.9 Typical Characteristics

SN74LVC1G06 D001_SCES296.gif Figure 1. TPD Across Temperature at 3.3-V VCC
SN74LVC1G06 D002_SCES296.gif Figure 2. TPD Across VCC at 25°C
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