SCES538G January   2004  – February 2020 SN74LVC1G38

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Logic Diagram (Positive Logic)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics, CL = 15 pF
    7. 6.7  Switching Characteristics, CL = 30 pF or 50 pF, –40°C to +85°C
    8. 6.8  Switching Characteristics, CL = 30 pF or 50 pF, –40°C to +125°C
    9. 6.9  Operating Characteristics
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
    1.     (Open Drain)
    2.     (Open Drain)
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 High-Drive Open-Drain Output
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-Voltage Tolerant Inputs
      6. 8.3.6 Up Translation and Down Translation Capable Outputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • DRY|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.1 Application Information

Open-drain devices are intrinsically capable of voltage translation. In this application, a 1.8-V logic signal is inverted and up-translated to 5 V at the output when the EN signal input is driven high by a 3.3-V signal. The output is held at 5 V in this scenario when the output of the device is in the high impedance state.
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