ZHCSG58 March   2017 SN74LVC1G86-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics, CL = 30 pF or 50 pF
    7. 6.7 Operating Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Function Table
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 接收文档更新通知
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 × VCC
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 × VCC
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
Δt/Δv Input transition rise or fall rate VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 ns/V
VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5
TA Operating free-air temperature DCK package –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC1G86-Q1 UNIT
DCK (SC70)
5 PINS
RθJA Junction-to-ambient thermal resistance 277.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 179.5 °C/W
RθJB Junction-to-board thermal resistance 75.9 °C/W
ψJT Junction-to-top characterization parameter 49.7 °C/W
ψJB Junction-to-board characterization parameter 75.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
VOH IOH = –100 µA 1.65 V to 5.5 V VCC – 0.1 V
IOH = –4 mA 1.65 V 1.2
IOH = –8 mA 2.3 V 1.9
IOH = –16 mA 3 V 2.4
IOH = –24 mA 2.3
IOH = –32 mA 4.5 V 3.8
VOL IOL = 100 µA 1.65 V to 5.5 V 0.1 V
IOL = 4 mA 1.65 V 0.45
IOL = 8 mA 2.3 V 0.3
IOL = 16 mA 3 V 0.4
IOL = 24 mA 0.55
IOL = 32 mA 4.5 V 0.55
II A or B input VI = 5.5 V or GND 0 to 5.5 V ±5 µA
Ioff VI or VO = 5.5 V 0 ±10 µA
ICC VI = VCC or GND, IO = 0 1.65 V to 5.5 V 15 µA
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND		 3 V to 5.5 V 500 µA
Ci VI = VCC or GND 3.3 V 6 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics, CL = 30 pF or 50 pF

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 TEST CONDITIONS VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 VCC = 3.3 V
± 0.3 V		 VCC = 5 V
± 0.5 V		 UNIT
MIN MAX MIN MAX MIN MAX MIN MAX
tpd A or B Y –40°C to 125°C temperature range, see Figure 2 3.5 12 1.8 7 1.3 6 1 5 ns

6.7 Operating Characteristics

TA = 25°C
PARAMETER TEST CONDITIONS VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V UNIT
TYP TYP TYP TYP
Cpd Power dissipation capacitance f = 10 MHz 22 22 22 24 pF

6.8 Typical Characteristics

SN74LVC1G86-Q1 sn74lvc1g86_ioh.gif Figure 1. Voh vs Ioh at 4.5 V
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