SCES359J August 2001 – October 2015 SN74LVC2G34
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
- DBV|6
- DRL|6
- YZP|6
- DCK|6
散热焊盘机械数据 (封装 | 引脚)
订购信息
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Documentation Support
For related documentation, see the following:
Implications of Slow or Floating CMOS Inputs, SCBA004
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
12.3 Trademarks
NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.