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SCES274I May 1999 – October 2014 SN74LVCZ244A

PRODUCTION DATA.

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请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DB|20
NS|20
PW|20
DW|20

散热焊盘机械数据 (封装 | 引脚)

订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage range		–0.5	6.5	V
V_I	Input voltage range⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high-impedance or power-off state⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high or low state⁽²⁾⁽³⁾		–0.5	V_CC + 0.5	V
I_IK	Input clamp current	V_I < 0		–50	mA
I_OK	Output clamp current	V_O < 0		–50	mA
I_O	Continuous output current			±50	mA
	Continuous current through V_CC or GND			±100	mA

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3) The value of V_CC is provided in the Recommended Operating Conditions table.

7.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	0	2500	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	0	4000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		2.7	3.6	V
V_IH	High-level input voltage	V_CC = 2.7 V to 3.6 V	2		V
V_IL	Low-level input voltage	V_CC = 2.7 V to 3.6 V		0.8	V
V_I	Input voltage		0	5.5	V
V_O	Output voltage	High or low state	0	V_CC	V
V_O	Output voltage	3-state	0	5.5	V
I_OH	High-level output current	V_CC = 2.7 V		–12	mA
I_OH	High-level output current	V_CC = 3 V		–24	mA
I_OL	Low-level output current	V_CC = 2.7 V		12	mA
I_OL	Low-level output current	V_CC = 3 V		24	mA
Δt/Δv	Input transition rise or fall rate			6	ns/V
Δt/ΔV_CC	Power-up ramp rate		150		µs/V
T_A	Operating free-air temperature		–40	125	°C

(1) All unused inputs of the device must be held at V_CCor GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, (SCBA004).

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		SN74LVCZ244A				UNIT
		DB	DW	NS	PW
		20 PINS
R_θJA	Junction-to-ambient thermal resistance	97.7	78.7	77.9	103.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	59.4	45.0	44.5	37.9
R_θJB	Junction-to-board thermal resistance	52.9	46.2	45.5	54.5
ψ_JT	Junction-to-top characterization parameter	21.4	18.3	18.3	3.3
ψ_JB	Junction-to-board characterization parameter	52.5	45.8	45.1	53.9

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report (SPRA953).

7.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER	TEST CONDITIONS		V_CC	–40°C TO 85°C			–40°C TO 125°C			UNIT
PARAMETER	TEST CONDITIONS		V_CC	MIN	TYP⁽¹⁾	MAX	MIN	TYP	MAX	UNIT
V_OH	I_OH = –100 μA		2.7 V to 3.6 V	V_CC – 0.2			V_CC – 0.2			V
	I_OH = –12 mA		2.7 V	2.2			2.2
	I_OH = –12 mA		3 V	2.4			2.4
	I_OH = –24 mA		3 V	2.2			2.2
V_OL	I_OL = 100 μA		2.7 V to 3.6 V			0.2			0.2	V
	I_OL = 12 mA		2.7 V			0.4			0.4
	I_OL = 24 mA		3 V			0.55			0.55
I_I	V_I = 0 to 5.5 V		3.6 V			±5			±5	μA
I_off	V_I or V_O = 5.5 V		0			±5			±5	μA
I_OZ	V_O = 0 to 5.5 V		3.6 V			±5			±5	μA
I_OZPU	V_O = 0.5 to 2.5 V,	OE = don't care	0 to 1.5 V			±5			±5	μA
I_OZPD	V_O = 0.5 to 2.5 V,	OE = don't care	1.5 V to 0			±5			±5	μA
I_CC	V_I = V_CC or GND	I_O = 0	3.6 V			100			100	μA
I_CC	3.6 V ≤ V_I ≤ 5.5 V⁽²⁾	I_O = 0	3.6 V			100			100	μA
ΔI_CC	One input at V_CC – 0.6 V, Other inputs at V_CC or GND		2.7 V to 3.6 V			100			100	μA
C_i	V_I = V_CC or GND		3.3 V		3.5			—		pF
C_o	V_O = V_CC or GND		3.3 V		5.5			—		pF

(1) All typical values are at V_CC = 3.3 V, T_A = 25°C.

(2) This applies in the disabled state only.

7.6 Switching Characteristics, –40°C to 85°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC = 2.7 V		V_CC = 3.3 V ± 0.3 V		UNIT
PARAMETER	FROM (INPUT)	TO (OUTPUT)	MIN	MAX	MIN	MAX	UNIT
t_pd	A or B	B or A		6.9	1.5	5.9	ns
t_en	OE	A or B		8.6	1.5	7.6	ns
t_dis	OE	A or B		6.8	1.5	6.5	ns

7.7 Switching Characteristics, –40°C to 125°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC = 2.7 V		V_CC = 3.3 V ± 0.3 V		UNIT
PARAMETER	FROM (INPUT)	TO (OUTPUT)	MIN	MAX	MIN	MAX	UNIT
t_pd	A or B	B or A		7.4	1.5	6.4	ns
t_en	OE	A or B		9.1	1.5	8.1	ns
t_dis	OE	A or B		7.3	1.5	7.1	ns

7.8 Operating Characteristics

T_A= 25°C

PARAMETER			TEST CONDITIONS	V_CC = 3.3 V	UNIT
PARAMETER			TEST CONDITIONS	TYP	UNIT
C_pd	Power dissipation capacitance per buffer/driver	Outputs enabled	f = 10 MHz	40	pF
C_pd	Power dissipation capacitance per buffer/driver	Outputs disabled	f = 10 MHz	3	pF

7.9 Typical Characteristics

Figure 1. TPD Across Temperature at 3.3 V

Figure 2. TPD Across V_CC at 25°C