ZHCSQV8 August   2022 SN74LXC1T14-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: Tpd
    7. 6.7 Switching Characteristics: TMAX
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Load Circuit and Voltage Waveforms
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 CMOS Schmitt-Trigger Inputs with Integrated Pulldowns
        1. 8.3.1.1 Input with Integrated Dynamic Pull-Down Resistors
      2. 8.3.2 Balanced High-Drive CMOS Push-Pull Outputs
      3. 8.3.3 Partial Power Down (Ioff)
      4. 8.3.4 VCC Isolation and VCC Disconnect (Ioff-float)
      5. 8.3.5 Over-Voltage Tolerant Inputs
      6. 8.3.6 Glitch-Free Power Supply Sequencing
      7. 8.3.7 Negative Clamping Diodes
      8. 8.3.8 Fully Configurable Dual-Rail Design
      9. 8.3.9 Supports High-Speed Translation
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Regulatory Requirements
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

8.3.9 Supports High-Speed Translation

The SN74LXC1T14-Q1 device can support high data-rate applications. The translated signal data rate can be up to 420 Mbps when the signal is translated from 3.3 V to 5.0 V.
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