ZHCSN53B December   2019  – March 2021 SN74LXCH8T245

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics, VCCA = 1.2 ± 0.1 V
    7. 6.7  Switching Characteristics, VCCA = 1.5 ± 0.1 V
    8. 6.8  Switching Characteristics, VCCA = 1.8 ± 0.15 V
    9. 6.9  Switching Characteristics, VCCA = 2.5 ± 0.2 V
    10. 6.10 Switching Characteristics, VCCA = 3.3 ± 0.3 V
    11. 6.11 Switching Characteristics, VCCA = 5.0 ± 0.5 V
    12. 6.12 Switching Characteristics: Tsk, TMAX
    13. 6.13 Operating Characteristics
    14. 6.14 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Load Circuit and Voltage Waveforms
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  CMOS Schmitt-Trigger Inputs with Integrated Pulldowns
        1. 8.3.1.1 Control Inputs with Integrated Static Pull-Down Resistors
      2. 8.3.2  Balanced High-Drive CMOS Push-Pull Outputs
      3. 8.3.3  Partial Power Down (Ioff)
      4. 8.3.4  VCC Isolation and VCC Disconnect
      5. 8.3.5  Over-Voltage Tolerant Inputs
      6. 8.3.6  Glitch-Free Power Supply Sequencing
      7. 8.3.7  Negative Clamping Diodes
      8. 8.3.8  Fully Configurable Dual-Rail Design
      9. 8.3.9  Supports High-Speed Translation
      10. 8.3.10 Bus-Hold Data Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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