ZHCSNT1J February   1997  – August 2022 SN65220 , SN65240 , SN75240

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 接收文档更新通知
    2. 13.2 支持资源
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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Overview

The SN65220, SN65240, and SN75240 devices integrate multiple unidirectional transient voltage suppressors (TVS). Figure 9-1 shows the equivalent circuit diagram of a single TVS diode.

For positive transient voltages, only the Q1 transistor determines the switching characteristic. When the input voltage reaches the Zener voltage, VZ, Zener diode D1 conducts; therefore, allowing for the base-emitter voltage, VBE, to increase. At VIN = VZ + VBE, the transistor starts conducting. From then on, its on-resistance decreases linearly with increasing input voltage.

For negative transient voltages, only diode D2 determines the switching characteristic. Here, switching occurs when the input voltage exceeds the diode forward voltage, VFW.

GUID-4AF49B4F-AC8E-4062-B1B5-376C27B5292B-low.gifFigure 9-1 TVS Structure and Current — Voltage Characteristic