米6体育平台手机版

ZHCSOE1F April 2002 – July 2021 SN65C3221 , SN75C3221

PRODUCTION DATA

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DB|16
PW|16
DW|16

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.5 Electrical Characteristics - Driver

over recommended ranges of supply voltage and operating free-air temperature range (unless otherwise noted)⁽³⁾ (see Figure 9-1)

PARAMETER		TEST CONDITIONS			MIN	TYP⁽¹⁾	MAX	UNIT
V_OH	High-level output voltage	DOUT at R_L = 3 kΩ to GND,	DIN = GND		5	5.4		V
V_OL	Low-level output voltage	DOUT at R_L = 3 kΩ to GND,	DIN = V_CC		−5	−5.4		V
I_IH	High-level input current	V_I = V_CC				±0.01	±1	μA
I_IL	Low-level input current	V_I at GND				±0.01	±1	μA
I_OS	Short-circuit output current⁽²⁾	V_CC = 3.6 V,	V_O = 0 V			±35	±60	mA
I_OS	Short-circuit output current⁽²⁾	V_CC = 5.5 V,	V_O = 0 V			±35	±90	mA
r_o	Output resistance	V_CC, V+, and V− = 0 V,	V_O = ±2 V		300	10M		Ω
I_off	Output leakage current	FORCEOFF = GND	V_O = ±12 V,	V_CC = 3 V to 3.6 V			±25	μA
I_off	Output leakage current	FORCEOFF = GND	V_O = ±10 V,	V_CC = 4.5 V to 5.5 V			±25	μA

(1) All typical values are at V_CC = 3.3 V or V_CC = 5 V, and T_A = 25°C.

(2) Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time.

(3) Test conditions are C1−C4 = 0.1 μF at V_CC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at V_CC = 5 V ± 0.5 V.