For system design, TAS5825M needs a 3.3-V or 1.8-V supply in addition to the (typical) 12 V or 24 V power-stage supply. Two internal voltage regulators provide good voltage levels for the gate drive circuitry and internal circuitry. The external pins are provided only as a connection point for off-chip bypass capacitors to filter the supply. Connecting external circuitry to these regulator outputs can result in reduced performance and damage to the device. Additionally, all circuitry requiring a floating voltage supply, that is, the high-side gate drive, is accommodated by built-in bootstrap circuitry requiring only a few external capacitors. To provide good electrical and acoustical characteristics, the PWM signal path for the output stage is designed as identical, independent half-bridges. For this reason, each half-bridge has separate bootstrap pins (BST_x). The gate drive voltages (GVDD) are derived from the PVDD voltage. Special attention needs to be paid to placing all decoupling capacitors as close to their associated pins as possible. In general, inductance between the power-supply pins and decoupling capacitors must be avoided. For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin (BST_x) to the power-stage output pin (OUT_x). When the power-stage output is low, the bootstrap capacitor is charged through an internal diode connected between the gate-drive regulator output pin (GVDD) and the bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output potential and thus provides a good voltage supply for the high-side gate driver.